MCP1824ST-3302E/DB Microchip Technology Inc., MCP1824ST-3302E/DB Datasheet - Page 4

• Manufacturer Part Number: MCP1824ST-3302E/DB
• Description: 300 mA CMOS LDO, Vout=3.3V, Extended Temp Range
• Manufacturer: Microchip Technology Inc.
• Type: Voltage Regulatorr

Specifications of MCP1824ST-3302E/DB

• Current, Output: 300 mA
• Current, Supply: 120 μA
• Package Type: SOT-223
• Regulation, Line: ±0.05 %/V
• Regulation, Load: ±0.5 %
• Regulator Type: Linear, Low Dropout
• Resistance, Thermal, Junction To Case: 15 °C/W
• Temperature, Operating, Range: -40 to +125 °C
• Voltage, Dropout: 200 mV
• Voltage, Input: 6 V
• Voltage, Noise: 2 μV/sqrt Hz
• Voltage, Output: 3.3 V
• Voltage, Supply, Rejection Ratio: 55 dB
• Lead Free Status / Rohs Status: RoHS Compliant part

MCP1824/MCP1824S
AC/DC CHARACTERISTICS (CONTINUED)
DS22070A-page 8
Electrical Specifications: Unless otherwise noted, V
I
Boldface type applies for junction temperatures, T
Maximum Pulsed Output Duty
Cycle
Maximum Pulsed Output Period
Adjust Pin Characteristics (Adjustable Output Only)
Adjustable Output Voltage
Range
Adjust Pin Reference Voltage
Adjust Pin Leakage Current
Adjust Temperature Coefficient
Fixed-Output Characteristics (Fixed Output Only)
Voltage Regulation
Power Good Characteristics
PWRGD Input Voltage Operat-
ing Range
PWRGD Threshold Voltage
(Referenced to V
PWRGD Threshold Hysteresis
PWRGD Output Voltage Low
PWRGD Output Current Sink
Capability
PWRGD Leakage
PWRGD Time Delay
Note 1:
OUT
= 1 mA, C
2:
3:
4:
5:
6:
7:
Parameters
The minimum V
V
voltage for the adjustable cases. V
TCV
temperature range. V
Load regulation is measured at a constant junction temperature using low duty-cycle pulse testing. Load regulation is
tested over a load range from 1 mA to the maximum specified output current.
Dropout voltage is defined as the input-to-output voltage differential at which the output voltage drops 2% below its
nominal value that was measured with an input voltage of V
The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction
temperature and the thermal resistance from junction to air. (i.e., T
dissipation will cause the device operating junction temperature to exceed the maximum +150°C rating. Sustained
junction temperatures above 150°C can impact device reliability.
The junction temperature is approximated by soaking the device under test at an ambient temperature equal to the
desired junction temperature. The test time is small enough such that the rise in the junction temperature over the
ambient temperature is not significant.
R
IN
is the nominal regulator output voltage for the fixed cases. V
OUT
OUT
= C
)
OUT
= (V
OUT-HIGH
= 4.7 µF (X7R Ceramic), T
IN
must meet two conditions: V
OUT-LOW
– V
I
PULSE_PERIOD
V
I
V
V
PULSE_DUTY
P
V
PWRGD_HYS
V
PWRGD_VIN
OUT-LOW
PWRGD_TH
TCV
PWRGD_L
I
WRGD
OUT_ADJ
PWRGD
V
Sym
V
I
T
ADJ
OUT
ADJ
PG
is the lowest voltage measured over the temperature range.
OUT
_
LK
R
) *10
= V
J
6
(Note 7) of -40°C to +125°C
ADJ *
A
/ (V
V
IN
= +25°C.
R
0.402
= V
Min
R
-10
- 2.5%
0.8
1.0
1.2
1.0
1.2
89
90
—
—
—
—
—
—
((R
* ΔTemperature). V
IN
OUT(MAX)
1
≥ 2.1V and V
/R
2
)+1).
V
R
0.410
±0.01
0.05
Typ
110
+ V
±0.5% V
2.0
6.0
40
92
92
—
—
—
—
—
Figure
1
IN
DROPOUT(MAX)
IN
= V
R
4-1.
≥ V
= 1.2V, 1.8V, etc. V
OUT-HIGH
OUT(MAX)
A
, T
R
0.418
Max
+10
+ 2.5%
OUT(MAX)
5.5
6.0
6.0
3.0
0.4
J
60
10
95
94
—
—
—
—
, θ
JA
, Note 1, V
). Exceeding the maximum allowable power
is the highest voltage measured over the
+ V
ppm/°C
%V
%V
+ V
DROPOUT(MAX)
Units
mA
ms
nA
nA
µs
%
V
V
V
V
V
DROPOUT(MAX).
OUT
OUT
R
R
is the desired set point output
= 1.8V for Adjustable Output,
2007 Microchip Technology Inc.
V
V
I
Period < 10 ms
V
V
I
V
I
V
Note 3
Note 2
T
T
For V
Falling Edge
V
V
V
I
ADJ = 0V
V
V
Rising Edge
R
OUT
OUT
OUT
PWRGD SINK
A
A
IN
R
IN
R
IN
IN
OUT
OUT
OUT
PWRGD
PWRGD
PULLUP
= +25°C
= -40°C to +125°C
= 0.8V to 5.0V,
= 0.8V to 5.0V,
= 2.1V to 6.0V,
= 2.1V to 6.0V
= 2.1V to V
= 6.0V, V
.
= 500 mA,
= 500 mA
= 1 mA
IN
< 2.5V Fixed,
= Adj.
>= 2.5V Fixed
< 2.1V, I
= 0.200V
= V
Conditions
= 10 kΩ
IN
ADJ
= 1.2 mA,
= 6.0V
IN
SINK
= 0V to 6V
= 6.0V,
= 100 µA