NTE385 NTE Electronics, Inc., NTE385 Datasheet
NTE385
Manufacturer Part Number
NTE385
Description
Transistor; NPN; 400 V; 7 V; 15 A; 5; 175 W @ degC; 0.2 mA (Max.); 8; TO3
Manufacturer
NTE Electronics, Inc.
Type
Audio Amplifier, Powerr
Datasheet
1.NTE385.pdf
(2 pages)
Specifications of NTE385
Complement To
PNP
Current, Base
5
Current, Collector
15 A
Current, Collector Cutoff
0.2 mA (Max.)
Current, Gain
8
Device Dissipation
175 W
Gain, Dc Current, Minimum
8
Material Type
Silicon
Package Type
TO-3
Polarity
NPN
Power Dissipation
175 W
Primary Type
Si
Resistance, Thermal, Junction To Case
1 °C/W
Transistor Polarity
NPN
Transistor Type
NPN
Voltage, Breakdown, Collector To Emitter
400 V
Voltage, Collector To Base
850
Voltage, Collector To Emitter
400 V
Voltage, Collector To Emitter, Saturation
1.5 V
Voltage, Emitter To Base
7 V
Voltage, Saturation, Collector To Emitter
1.5 V (Max.)
Lead Free Status / Rohs Status
RoHS Compliant part
Description:
The NTE385 is a silicon NPN transistor in a TO3 type package designed for high voltage, high speed,
power switching in inductive circuits where fall time is critical. It is particularly suited for line operated
switch mode applications.
Features:
D Fast Turn–Off Times
Absolute Maximum Ratings:
Collector–Emitter Voltage, V
Collector–Emitter Voltage (V
Emitter–Base Voltage, V
Collector Current, I
Base Current, I
Total Power Dissipation (T
Total Power Dissipation (T
Operating Junction Temperature Range, T
Storage Temperature Range, T
Thermal Resistance, Junction–to–Case, R
Lead Temperature (During Soldering, 1/8” from case, 5sec), T
Note 1. Pulse test: Pulse Width = 5ms, Duty Cycle
Electrical Characteristics: (T
Note 2. Pulse test: Pulse Width = 300 s, Duty Cycle
OFF Characteristics (Note 2)
Collector–Emitter Sustaining Voltage
Collector Cutoff Current
Emitter Cutoff Current
Emitter–Base Breakdown Voltage
Continuous
Peak (Note 1)
Overload
Continuous
Peak (Note 1)
Derate Above 25 C
Parameter
B
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
EB
C
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= +25 C), P
= +100 C), P
CEO(sus)
BE
Audio Power Amp, Switch
stg
C
= –1.5V), V
V
V
Symbol
CEO(sus)
Silicon NPN Transistor
(BR)EBO
= +25 C unless otherwise specified)
I
I
I
CER
EBO
CEX
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
D
I
V
V
V
V
V
I
C
E
D
CEX
CEV
CE
CE
BE
J
thJC
= 200mA, I
= 50mA, –I
CEX
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE385
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= 5V, I
= 850V, R
= 850V, R
= 850V, V
= 850V, V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
C
Test Conditions
= 0
C
B
BE
BE
= 0, L = 25mH
= 0
BE(off)
BE(off)
10%.
= 10
= 10 , T
2%, V
= 1.5V
= 1.5V, T
C
L
cl
= +100 C
= 300V, V
. . . . . . . . . . . . . . . . . . . . . . .
C
= +125 C
BE(off)
Min
400
–
–
–
–
–
7
= 5V, L
Typ
–65 to +200 C
–65 to +200 C
–
–
–
–
–
–
–
C
Max Unit
0.2
2.0
0.5
3.0
0.1
= 180 H.
–
–
1.0W/ C
1.0 C/W
+275 C
175W
100W
400V
850V
mA
mA
mA
mA
mA
15A
30A
60A
20A
V
V
7V
5A
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NTE385 Summary of contents
Page 1
... Description: The NTE385 is a silicon NPN transistor in a TO3 type package designed for high voltage, high speed, power switching in inductive circuits where fall time is critical particularly suited for line operated switch mode applications. Features: D Fast Turn–Off Times Absolute Maximum Ratings: Collector– ...
Page 2
Electrical Characteristics (Cont’d): (T Parameter ON Characteristics (Note 2) DC Current Gain Collector–Emitter Saturation Voltage Base–Emitter Saturation Voltage Dynamic Characteristics Output Capacitance Switching Characteristics (Resistive Load) Delay Time Rise Time Storage Time Fall Time Switching Characteristics (Inductive Load, Clamped) Storage ...