SI4412DY-T1-E3 Siliconix / Vishay, SI4412DY-T1-E3 Datasheet - Page 2

• Manufacturer Part Number: SI4412DY-T1-E3
• Description: MOSFET; N-Ch; VDSS 30V; RDS(ON) 0.028 Ohm; ID +/-7A; SO-8; PD 2.5W; VGS +/-20V; gFS 16S
• Manufacturer: Siliconix / Vishay

Specifications of SI4412DY-T1-E3

• Current, Drain: ±7 A
• Gate Charge, Total: 19.5 nC
• Package Type: SO-8
• Polarization: N-Channel
• Power Dissipation: 2.5 W
• Resistance, Drain To Source On: 0.028 Ohm
• Temperature, Operating, Maximum: +150 °C
• Temperature, Operating, Minimum: -55 °C
• Time, Turn-off Delay: 38 ns
• Time, Turn-on Delay: 9 ns
• Transconductance, Forward: 16 S
• Voltage, Breakdown, Drain To Source: 30 V
• Voltage, Forward, Diode: 1.1 V
• Voltage, Gate To Source: ±20 V
• Lead Free Status / Rohs Status: RoHS Compliant part Electrostatic Device

Notes
a.
b.
Si4412DY
2
Specifications (T
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
Zero Gate Voltage Drain Current
On-State Drain Current
Drain Source On State Resistance
Drain-Source On-State Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Guaranteed by design, not subject to production testing.
Pulse test; pulse width
a
Parameter
b
b
b
300 s, duty cycle
J
= 25 C Unless Otherwise Noted)
b
b
Symbol
V
r
r
I
t
DS( )
DS(on)
t
I
I
I
V
D(on)
d(off)
GS(th)
Q
Q
d(on)
GSS
DSS
DSS
g
Q
t
t
t
SD
rr
fs
gs
gd
r
f
g
2%.
V
I
V
D
DS
DS
V
I
V
= 30 V, V
= 15 V, V
V
V
F
V
V
V
V
1 A, V
DS
DS
DS
= 2 A, di/dt = 100 A/ s
GS
DS
I
DD
DS
GS
S
Test Condition
= 0 V, V
= V
= 2 A, V
= 4.5 V, I
= 30 V, V
= 15 V, I
= 25 V, R
= 10 V, I
GEN
5 V, V
GS
GS
GS
, I
= 10 V, R
GS
= 0 V, T
D
= 10 V, I
GS
D
GS
D
D
= 250 A
GS
L
=
= 7.0 A
=7.0 A
= 3.5 A
= 0 V
= 25
= 10 V
= 0 V
20 V
J
G
D
= 55 C
= 2 A
= 6
Min
1.0
30
Typ
0.021
0.030
0.75
19.5
3.4
2.7
16
12
38
19
45
9
a
Siliconix
Max
0.028
0.042
1.1
25
29
15
20
55
28
80
100
2
Unit
nA
nC
ns
V
A
V
S
A
A