AMIS-49250-XTD ON Semiconductor, AMIS-49250-XTD Datasheet - Page 10

IC TXRX FIELDBUS MAU 44-NQFP

AMIS-49250-XTD

Manufacturer Part Number
AMIS-49250-XTD
Description
IC TXRX FIELDBUS MAU 44-NQFP
Manufacturer
ON Semiconductor
Type
Transceiverr
Datasheet

Specifications of AMIS-49250-XTD

Number Of Drivers/receivers
1/1
Protocol
MDS-MAU
Voltage - Supply
4.75 V ~ 6.2 V
Mounting Type
Surface Mount
Package / Case
44-LQFP
Logic Type
Fieldbus Media Access Unit
Logic Family
AMIS-492x0
Number Of Channels Per Chip
1
Input Level
CMOS
Output Level
CMOS
Output Type
Open Drain
High Level Output Current
50 uA
Low Level Output Current
50 uA
Supply Voltage (max)
6.2 V
Supply Voltage (min)
3 V
Maximum Operating Temperature
+ 85 C
Minimum Operating Temperature
- 40 C
Mounting Style
SMD/SMT
Polarity
Inverting/Non-Inverting
Number Of Transmitters
1
Power Supply Requirement
Dual
Operating Temperature Classification
Industrial
Mounting
Surface Mount
Pin Count
44
Operating Temperature (max)
85C
Operating Temperature (min)
-40C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
AMIS-49250-XTDOS

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
AMIS-49250-XTD
Manufacturer:
ON Semiconductor
Quantity:
10 000
AMIS-492x0
3.4 Receiver Block
Table 10: Receiver Sub-blocks
Note:
Parameter
Band Pass Filter
Input voltage
Output voltage swing
Output slew rate
Input offset voltage
Filter resistors
Carrier Detector
Threshold voltage
Output high voltage
Output low voltage
Output high current
Output low current
Output rising time
Output leak current
Zero-cross Detector
Threshold voltage
Output high voltage
Output low voltage
Output high current
Output low current
Output rising time
Output leak current
1.
The band pass filter is made up of a two pole high pass filter in series with a two pole low pass filter. The filter consists of four resistors internal to AMIS-492x0,
and four external capacitors. The active part of each filter is an amplifier connected in a follower configuration.
(1)
Symbol
FLTOUT
RF1
RF2
RF3
RF4
V
V
V
V
V
V
V
V
SR
V
V
I
I
I
I
OH
t
t
OH
t
t
TH+
OL
TH+
OL
TH-
TH-
OS
OH
OH
BP
OL
R
F
OL
R
F
V
MID
V
V
Min.
DD
DD
V
216
-60
+0.025
60
16
43
40
50
50
50
50
1
1
MID
-0.6
-0.6
Rev. 6 | Page 10 of 22 | www.onsemi.com
V
MID
Typ.
V
270
-50
0.6
0.3
0.3
+0.040
0.3
0.3
75
20
54
50
MID
V
MID
Max.
324
V
± 5
-40
0.3
0.3
+0.058
90
24
65
60
4
4
MID
Units
V/μs
mV
mV
mV
μA
μA
μA
μA
μs
μs
μs
μs
V
V
V
V
V
V
V
V
Conditions
SIGIN pin to GND
Relative to V
I
I
V
V
C
C
No carrier
Carrier active
I
I
V
V
C
C
OH
OL
OH
OL
DD
O
DD
O
L
L
L
L
= 10pF
= 10pF
= 10pF
= 10pF
= 0mA
= 0mA
= 0mA
≤ 0.6V
= 0mA
≤ 0.6V
-V
-V
O
O
≤ 0.6V
≤ 0.6V
MID

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