NTE5608 NTE Electronics, Inc., NTE5608 Datasheet
NTE5608
Manufacturer Part Number
NTE5608
Description
TRIAC; TO-220; 400 V; 8 A; 3 K/W; 60 K/W; -40 degC; 125 degC; 1 W; 10 mA (Max.
Manufacturer
NTE Electronics, Inc.
Datasheet
1.NTE5608.pdf
(2 pages)
Specifications of NTE5608
Channel Type
N
Current, Dc Gate-trigger
10 mA (Max.)
Current, Dc Holding
10 mA (Max.)
Current, On-state, Average, Maximum
8 A
Current, On-state, Rms, Maximum
8 A
Dissipation, Gate-power, Average
1 W
Package Type
TO-220
Resistance, Thermal, Junction To Case
3 K⁄W
Temperature, Operating, Maximum
125 °C
Temperature, Operating, Minimum
-40 °C
Thermal Resistance, Junction To Ambient
60 K⁄W
Voltage, Dc Gate-trigger
2.5 V (Max.)
Voltage, Repetitive Peak Off State
400
Description:
The NTE5608 through NTE5610 series of TRIACs are high performance glass passivated PNPN
devices in a TO220 type package designed for general purpose applications where moderate gate
sensitivity is required.
Absolute Maximum Ratings: (T
Repetitive Peak Off–State Voltage (T
On–State Current (All Conduction Angles, T
Non–Repetitive On–State Current (Half Cycle), I
Fusing Current (t = 10ms), I
Peak Gate Current (t = 10 s Max), I
Peak Gate Dissipation (t = 10 s Max), P
Gate Dissipation (t = 20ms Max), P
Operating Junction Temperature Range, T
Storage Temperature Range, T
Thermal Resistance, Junction–to–Case, R
Thermal Resistance, Junction–to–Ambient, R
Lead Temperature (During Soldering, 1.6mm from case, 10sec max), T
Electrical Characteristics: (T
Off–State Leakage Current
On–State Voltage
On–State Threshold Voltage
On–State Slope Resistance
NTE5608
NTE5609
NTE5610
60Hz
50Hz
Parameter
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
2
Symbol
t
V
I
DRM
T(TO)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
V
r
stg
A
T
T
NTE5608 thru NTE5610
= +25 C unless otherwise specified)
A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
G(AV)
= +25 C unless otherwise specified)
GM
V
V
I
T
T
J
T
J
J
D
D
= –40 to +125 C, R
= 12A, T
= +125 C
= +125 C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= V
= V
GM
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
J
thJC
DRM
DRM
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
TRIAC
8 Amp
thJA
= +85 C), I
, R
, R
J
= +25 C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Test Conditions
TSM
GK
GK
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= 1k , T
= 1k , T
T(RMS)
J
J
GK
= +25 C
= +125 C
= 1k ), V
. . . . . . . . . . . . . . . . . . . . . . . . . . .
L
DRM
. . . . . . . . . . . . . . .
Min
–
–
–
–
–
Typ
–
–
–
–
–
–40 to +125 C
–40 to +125 C
Max
1.85
80
5
2
1
+250 C
60K/W
24A
3K/W
400V
600V
800V
Unit
m
mA
10W
V
V
77A
70A
A
1W
8A
4A
2
s
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NTE5608 Summary of contents
Page 1
... Description: The NTE5608 through NTE5610 series of TRIACs are high performance glass passivated PNPN devices in a TO220 type package designed for general purpose applications where moderate gate sensitivity is required. Absolute Maximum Ratings: (T Repetitive Peak Off–State Voltage (T NTE5608 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...
Page 2
Electrical Characteristics (Cont’d): (T Parameter Gate Trigger Current Gate Trigger Voltage Holding Current Critical Rate–of–Rise Critical Rate–of–Rise, Off–State Note 1. For either polarity of gate voltage with reference to electrode MT .147 (3.75) Dia Max .070 (1.78) Max = +25 ...