IRFP450PBF Vishay PCS, IRFP450PBF Datasheet - Page 7

• Manufacturer Part Number: IRFP450PBF
• Description: MOSFET, Power; N-Ch; VDSS 500V; RDS(ON) 0.4Ohm; ID 14A; TO-247AC; PD 190W; VGS +/-20V
• Manufacturer: Vishay PCS

Specifications of IRFP450PBF

• Current, Drain: 14 A
• Gate Charge, Total: 150 nC
• Package Type: TO-247AC
• Polarization: N-Channel
• Power Dissipation: 190 W
• Resistance, Drain To Source On: 0.4 Ohm
• Temperature, Operating, Maximum: +150 °C
• Temperature, Operating, Minimum: -55 °C
• Time, Turn-off Delay: 92 ns
• Time, Turn-on Delay: 17 ns
• Transconductance, Forward: 9.3 S
• Voltage, Breakdown, Drain To Source: 500 V
• Voltage, Forward, Diode: 1.4 V
• Voltage, Gate To Source: ±20 V
• Lead Free Status / Rohs Status: RoHS Compliant part Electrostatic Device

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?91233.
Document Number: 91233
S-81271-Rev. A, 16-Jun-08
Re-applied
voltage
Reverse
recovery
current
+
R
-
G
D.U.T
*
Driver gate drive
D.U.T. I
D.U.T. V
Inductor current
V
GS
= 5 V for logic level devices
P.W.
SD
DS
waveform
waveform
Peak Diode Recovery dV/dt Test Circuit
Ripple ≤ 5 %
Body diode forward drop
Period
Body diode forward
+
-
Fig. 14 - For N-Channel
• dV/dt controlled by R
• Driver same type as D.U.T.
• I
• D.U.T. - device under test
SD
Diode recovery
current
controlled by duty factor "D"
Circuit layout considerations
dV/dt
• Low stray inductance
• Ground plane
• Low leakage inductance
dI/dt
current transformer
D =
-
G
Period
P.W.
+
V
V
I
SD
GS
DD
= 10 V*
+
-
IRFP450, SiHFP450
V
DD
Vishay Siliconix
www.vishay.com
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