SUD50P04-09L-E3 Siliconix / Vishay, SUD50P04-09L-E3 Datasheet
SUD50P04-09L-E3
Specifications of SUD50P04-09L-E3
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SUD50P04-09L-E3 Summary of contents
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... DS DS(on) 0.0094 0.0145 4 TO-252 Top View Ordering Information: SUD50P04-09L SUD50P04-09L (Lead (Pb)-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T = 175 °C) J Pulsed Drain Current Avalanche Current a Single Avalanche Energy Power Dissipation Operating Junction and Storage Temperature Range ...
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... SUD50P04-09L Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b Dynamic Input Capacitance Output Capacitance Reverse Transfer Capacitance c Total Gate Charge ...
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... Capacitance Document Number: 72243 S-71660-Rev. B, 06-Aug-07 New Product 100 0.020 ° °C 0.016 125 °C 0.012 0.008 0.004 0.000 60 80 100 C iss SUD50P04-09L Vishay Siliconix 125 ° ° °C 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3 Gate-to-Source Voltage (V) GS Transfer Characteristics ...
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... SUD50P04-09L Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C unless noted 1 1.6 1.4 1.2 1.0 0.8 0 Junction Temperature (°C) J On-Resistance vs. Junction Temperature THERMAL RATINGS 100 T - Case Temperature (°C) C Maximum Avalanche and Drain Current vs. Case Temperature 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0 ...
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All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or ...