IRF710PBF Vishay PCS, IRF710PBF Datasheet - Page 3
IRF710PBF
Manufacturer Part Number
IRF710PBF
Description
400V SINGLE N-CHANNEL HEXFET POWER MOSFET IN A TO-220AB PACKAGE
Manufacturer
Vishay PCS
Datasheet
1.IRF710PBF.pdf
(8 pages)
Specifications of IRF710PBF
Current, Drain
2 A
Fall Time
11 ns
Gate Charge, Total
17 nC
Operating And Storage Temperature
–55 to +150 °C
Package Type
TO-220
Polarization
N-Channel
Power Dissipation
36 W
Resistance, Drain To Source On
3.6 Ohm
Resistance, Thermal, Junction To Case
3.5 °C/W
Time, Rise
8 ns
Time, Turn-off Delay
21 ns
Time, Turn-on Delay
8 ns
Transconductance, Forward
4.5 S
Voltage, Breakdown, Drain To Source
400 V
Voltage, Drain To Source
400 V
Voltage, Forward, Diode
1.6 V
Voltage, Gate To Source
±20 V
Lead Free Status / Rohs Status
RoHS Compliant part
Electrostatic Device
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IRF710PBF
Manufacturer:
IR
Quantity:
18 400
IRF710, SiHF710
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Fig. 1 - Typical Output Characteristics, T
= 25 °C
Fig. 3 - Typical Transfer Characteristics
C
Fig. 4 - Normalized On-Resistance vs. Temperature
Fig. 2 - Typical Output Characteristics, T
= 150 °C
C
Document Number: 91041
www.vishay.com
S-Pending-Rev. A, 30-May-08
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