NTE5620 NTE Electronics, Inc., NTE5620 Datasheet
NTE5620
Manufacturer Part Number
NTE5620
Description
TRIAC, Power MOSFET; TO-220; 800 V; N; 8 A; 50 mA (Max.); 16 W; 2.2 degC/W
Manufacturer
NTE Electronics, Inc.
Datasheet
1.NTE5620.pdf
(4 pages)
Specifications of NTE5620
Channel Type
N
Current, Gate Trigger
50 mA (Max.)
Current, On-state, Rms, Maximum
8 A
Package Type
TO-220
Power Dissipation
16 W
Resistance, Thermal, Junction To Case
2.2 °C⁄W
Temperature, Operating, Maximum
125 °C
Temperature, Operating, Minimum
-40 °C
Thermal Resistance, Junction To Ambient
60 °C⁄W
Voltage, Reverse, Peak, Maximum
800 V
The NTE5620 TRIAC is designed primarily for full–wave AC control applications, such as light dim-
mers, heater controls, motor controls, and power supplies; or wherever full wave silicon gate con-
trolled solid state devices are needed. TRIAC type thyristors switch from a blocking to a conducting
state for either polarity of applied voltage with positive or negative gate triggering.
Features:
D Blocking Voltage – 800 Volts
D All Diffused and Glass Passivated Junctions for Greater Parameter Uniformity and Stability
D Small, Rugged, TO220 Full Pack for Low Thermal Resistance, High Heat Dissipation, and Durability
D Gate Triggering Guaranteed in Four Modes
Absolute Maximum Ratings:
Peak Repetitive Off–State Voltage, V
On–State Current RMS, I
Peak Non–Repetitive Surge Current, I
Peak Gate Power (T
Average Gate Power (T
Peak Gate Current (Pulse Width = 2 s), I
RMS Isolation Voltage (T
Operating Junction Temperature Range, T
Storage Temperature Range, T
Thermal Resistance, Junction–to–Case, R
Typical Thermal Resistance, Case–to–Sink, R
Thermal Resistance, Junction–to–Ambient, R
Note 1. Ratings apply for open gate conditions. Thyristor devices shall not be tested with a
Note 2. The case temperature reference point for all T
(T
(T
(One Full Cycle, 60Hz, T
constant current source for blocking capability such that the voltage applied exceeds the
rated blocking voltage.
lead of the package as close as possible to the plastic body.
J
C
= –40 to +125 C, 1/2 Sine Wave 50 to 60H
= +80 C, Full Cycle Sine Wave 50 to 60H
C
= +80 C, Pulse Width = 2 s), P
C
A
T(RMS)
= +80 C, t = 8.3ms), P
= +25 C, Relative Humidity
800V
stg
C
= +125 C, Preceded and followed by rated current)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
DRM
RM
TSM
, 8A, TO220 Full Pack
GM
J
thJC
NTE5620
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
TRIAC
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
thJA
thCS
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
G(AV)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Z
, Note 2 )
GM
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Z
C
, Gate Open, Note 1)
20%), V
measurements is a point on the center
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . .
(ISO)
. . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . .
–40 to +125 C
–40 to +150 C
. . . . . .
2.2 C/W
2.2 C/W
60 C/W
350mW
1500V
800V
100A
16W
8A
4A
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NTE5620 Summary of contents
Page 1
... The NTE5620 TRIAC is designed primarily for full–wave AC control applications, such as light dim- mers, heater controls, motor controls, and power supplies; or wherever full wave silicon gate con- trolled solid state devices are needed. TRIAC type thyristors switch from a blocking to a conducting state for either polarity of applied voltage with positive or negative gate triggering ...
Page 2
Electrical Characteristics: (T Characteristics Peak Blocking Current (Either Direction) (Rated +125 C, Gate Open) DRM J Peak On–State Voltage (Either Direction 11.3A Peak; Pulse Width = 1 to 2ms, TM Duty Cycle < 2%) ...
Page 3
MT 2 .408 (10.36) Max .280 (7.11) .490 (12.45 .100 (2.54 Gate .185 (4.7) .110 (2.79) .347 (8.8) .690 (17.53) Gate .500 (12.7) Min .105 (2.66) ...
Page 4
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