IRF9Z14SPBF Vishay PCS, IRF9Z14SPBF Datasheet

IRF9Z14SPBF

Manufacturer Part Number

IRF9Z14SPBF

Description

MOSFET, Power; P-Ch; VDSS -60V; RDS(ON) 0.5Ohm; ID -6.7A; TO-220AB; PD 43W; VGS +/-20V

Manufacturer

Vishay PCS

Datasheet

1.IRF9Z14SPBF.pdf (2 pages)

Specifications of IRF9Z14SPBF

Current, Drain

-6.7 A

Gate Charge, Total

12 nC

Package Type

TO-220AB

Polarization

P-Channel

Power Dissipation

43 W

Resistance, Drain To Source On

0.5 Ohm

Temperature, Operating, Maximum

+175 °C

Temperature, Operating, Minimum

-55 °C

Time, Turn-off Delay

10 ns

Time, Turn-on Delay

11 ns

Transconductance, Forward

1.4 S

Voltage, Breakdown, Drain To Source

-60 V

Voltage, Forward, Diode

-5.5 V

Voltage, Gate To Source

±20 V

Lead Free Status / Rohs Status

RoHS Compliant part Electrostatic Device

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Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b. V

c. I

d. 1.6 mm from case.

* Pb containing terminations are not RoHS compliant, exemptions may apply

PRODUCT SUMMARY

Configuration

ORDERING INFORMATION

Package

Lead (Pb)-free

SnPb

ABSOLUTE MAXIMUM RATINGS T

PARAMETER

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current

Pulsed Drain Current

Linear Derating Factor

Single Pulse Avalanche Energy

Repetitive Avalanche Current

Repetitive Avalanche Energy

Maximum Power Dissipation

Peak Diode Recovery dV/dt

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature)

Mounting Torque

DS(on)

(Max.) (nC)

(nC)

(V)

≤ - 6.7 A, dI/dt ≤ 90 A/µs, V

= - 25 V, starting T

(Ω)

TO-220

= 25 °C, L = 3.6 mH, R

≤ V

= - 10 V

, T

P-Channel MOSFET

Single

- 60

≤ 175 °C.

3.8

5.1

= 25 Ω, I

Power MOSFET

0.50

= 25 °C, unless otherwise noted

at - 10 V

6-32 or M3 screw

= - 6.7 A (see fig. 12).

for 10 s

= 25 °C

TO-220

IRF9Z14PbF

SiHF9Z14-E3

IRF9Z14

SiHF9Z14

= 100 °C

= 25 °C

FEATURES

• Dynamic dV/dt Rating

• Repetitive Avalanche Rated

• P-Channel

• 175 °C Operating Temperature

• Fast Switching

• Ease of Paralleling

• Simple Drive Requirements

• Lead (Pb)-free Available

DESCRIPTION

Third generation Power MOSFETs from Vishay provide the

designer with the best combination of fast switching,

ruggedized

cost-effectiveness.

The TO-220 package is universally preferred for all

commercial-industrial applications at power dissipation

levels to approximately 50 W. The low thermal resistance

and low package cost of the TO-220 contribute to its wide

acceptance throughout the industry.

SYMBOL

dV/dt

, T

device

stg

design,

IRF9Z14, SiHF9Z14

- 55 to + 175

LIMIT

300

± 20

- 6.7

- 4.7

0.29

- 6.7

- 4.5

- 60

- 27

140

4.3

1.1

low

Vishay Siliconix

on-resistance

lbf · in

UNIT

W/°C

N · m

RoHS*

V/ns

COMPLIANT

°C

Available

and

Related parts for IRF9Z14SPBF

IRF9Z14SPBF Summary of contents

Page 1

PRODUCT SUMMARY V ( (Ω DS(on (Max.) (nC (nC (nC) gd Configuration TO-220 ORDERING INFORMATION Package Lead (Pb)-free SnPb ABSOLUTE MAXIMUM RATINGS T ...

IRF9Z14, SiHF9Z14 Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient Case-to-Sink, Flat, Greased Surface Maximum Junction-to-Case (Drain) SPECIFICATIONS °C, unless otherwise noted J PARAMETER Static Drain-Source Breakdown Voltage V Temperature Coefficient DS Gate-Source Threshold Voltage Gate-Source Leakage ...

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IRF9Z14SPBF Vishay PCS, IRF9Z14SPBF Datasheet

IRF9Z14SPBF

Specifications of IRF9Z14SPBF

Related parts for IRF9Z14SPBF

IRF9Z14SPBF Summary of contents

Page 1

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