74HC123D,652 Philips Semiconductors, 74HC123D,652 Datasheet

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74HC123D,652

Manufacturer Part Number
74HC123D,652
Description
MILTIVIBRATOR; SO-16; IEC LOGIC; 7 V (MAX.); -40; +125; 1000 NS (MAX.) TR
Manufacturer
Philips Semiconductors
Datasheet

Specifications of 74HC123D,652

Circuit Type
High Speed, Low-Power Schottky, Silicon Gate
Current, Leakage, Input
±0.1 μA (Max.)
Current, Quiescent Supply
8.0 uA (Max.)
Current, Supply
160 μA
Function Type
3-Inputs
Input Fall Time
1000 ns (Max.)
Input Rise Time
1000 ns (Max.)
Logic Function
Multivibrator
Logic Type
CMOS
Number Of Circuits
Dual
Package Type
SO-16
Power Dissipation
500 mW (Max.)
Special Features
Monostable, Retriggerable, Schmitt-Trigger
Temperature, Operating, Maximum
125 °C
Temperature, Operating, Minimum
-40 °C
Temperature, Operating, Range
-40 to +125 °C
Voltage, Dc Input
1.2 V (Typ.) @ 25 °C
Voltage, Dc Output
2.0 V (Typ.) @ 25 °C
Voltage, Supply
5 V
Lead Free Status / Rohs Status
RoHS Compliant part Electrostatic Device
1. General description
2. Features
The 74HC123; 74HCT123 are high-speed Si-gate CMOS devices and are pin compatible
with Low-power Schottky TTL (LSTTL). They are specified in compliance with JEDEC
standard no. 7A.
The 74HC123; 74HCT123 are dual retriggerable monostable multivibrators with output
pulse width control by three methods:
Schmitt-trigger action in the nA and nB inputs, makes the circuit highly tolerant to slower
input rise and fall times.
The 74HC123; 74HCT123 is identical to the 74HC423; 74HCT423 but can be triggered
via the reset input.
I
I
I
I
I
I
1. The basic pulse time is programmed by selection of an external resistor (R
2. Once triggered, the basic output pulse width may be extended by retriggering the
3. An internal connection from nRD to the input gates makes it possible to trigger the
74HC123; 74HCT123
Dual retriggerable monostable multivibrator with reset
DC triggered from active HIGH or active LOW inputs
Retriggerable for very long pulses up to 100 % duty factor
Direct reset terminates output pulse
Schmitt-trigger action on all inputs except for the reset input
ESD protection:
Specified from 40 C to +85 C and from 40 C to +125 C
capacitor (C
gated active LOW-going edge input (nA) or the active HIGH-going edge input (nB). By
repeating this process, the output pulse period (nQ = HIGH, nQ = LOW) can be made
as long as desired. Alternatively an output delay can be terminated at any time by a
LOW-going edge on input nRD, which also inhibits the triggering.
circuit by a HIGH-going signal at input nRD as shown in the function table.
N
N
HBM EIA/JESD22-A114-C exceeds 2000 V
MM EIA/JESD22-A115-A exceeds 200 V
EXT
).
Product data sheet
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74HC123D,652 Summary of contents

Page 1

Dual retriggerable monostable multivibrator with reset 1. General description The 74HC123; 74HCT123 are high-speed Si-gate CMOS devices and are pin compatible with Low-power Schottky TTL (LSTTL). They are specified in compliance with JEDEC standard no. 7A. The 74HC123; ...

Page 2

... Philips Semiconductors 3. Ordering information Table 1. Ordering information Type number Package Temperature range Name 74HC123 74HC123N +125 C 74HC123D +125 C 74HC123DB +125 C 74HC123PW +125 C 74HC123BQ +125 C 74HCT123 74HCT123N +125 C 74HCT123D +125 C 74HCT123DB +125 C 74HCT123PW +125 C 74HC_HCT123_4 Product data sheet Dual retriggerable monostable multivibrator with reset ...

Page 3

... Philips Semiconductors 7. Limiting values Table 4. In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to GND (ground = 0 V). Symbol Parameter GND T stg P tot [1] For DIP16 package: P [2] For SO16 package: P [3] For SSOP16 and TSSOP16 packages: P [4] For DHVQFN16 package ...

Page 4

... Philips Semiconductors 9. Static characteristics Table 6. Static characteristics 74HC123 At recommended operating conditions; voltages are referenced to GND (ground = 0 V). Symbol Parameter amb V HIGH-state input voltage IH V LOW-state input voltage IL V HIGH-state output voltage OH V LOW-state output voltage OL I input leakage current LI I quiescent supply current ...

Page 5

... Philips Semiconductors Table 6. Static characteristics 74HC123 At recommended operating conditions; voltages are referenced to GND (ground = 0 V). Symbol Parameter V LOW-state output voltage OL I input leakage current LI I quiescent supply current +125 C amb V HIGH-state input voltage IH V LOW-state input voltage IL V HIGH-state output voltage ...

Page 6

... Philips Semiconductors Table 7. Static characteristics 74HCT123 At recommended operating conditions; voltages are referenced to GND (ground = 0 V). Symbol Parameter V LOW-state output voltage OL I input leakage current LI I quiescent supply current CC I additional quiescent supply CC current C input capacitance +85 C amb V HIGH-state input voltage IH V LOW-state input voltage ...

Page 7

... Philips Semiconductors Table 7. Static characteristics 74HCT123 At recommended operating conditions; voltages are referenced to GND (ground = 0 V). Symbol Parameter I additional quiescent supply CC current 10. Dynamic characteristics Table 8. Dynamic characteristics 74HC123 Voltages are referenced to GND (ground = 0 V); C For test circuit see Figure 12. Symbol Parameter amb ...

Page 8

... Philips Semiconductors Table 8. Dynamic characteristics 74HC123 Voltages are referenced to GND (ground = 0 V); C For test circuit see Figure 12. Symbol Parameter t retrigger time nA external timing resistor EXT C external timing capacitor EXT C power dissipation capacitance +85 C amb propagation delay PHL PLH nRD, nA nRD (reset ...

Page 9

... Philips Semiconductors Table 8. Dynamic characteristics 74HC123 Voltages are referenced to GND (ground = 0 V); C For test circuit see Figure 12. Symbol Parameter +125 C amb propagation delay PHL PLH nRD, nA nRD (reset output transition time THL TLH t pulse width W nA LOW nB HIGH nRD LOW [1] For other R ...

Page 10

... Philips Semiconductors [ used to determine the dynamic power dissipation ( input frequency in MHz output frequency in MHz duty factor output load capacitance in pF supply voltage timing capacitance in pF; EXT sum of outputs [5] The condition GND Table 9. Dynamic characteristics 74HCT123 Voltages are referenced to GND (ground = 0 V); C ...

Page 11

... Philips Semiconductors Table 9. Dynamic characteristics 74HCT123 Voltages are referenced to GND (ground = 0 V); C For test circuit see Figure 12. Symbol Parameter t propagation delay PLH nRD, nA nRD (reset output transition time THL TLH t pulse width W nA LOW nB HIGH nRD LOW +125 C amb t propagation delay ...

Page 12

... Philips Semiconductors [ used to determine the dynamic power dissipation ( input frequency in MHz output frequency in MHz duty factor output load capacitance in pF supply voltage timing capacitance in pF; EXT sum of outputs [5] The condition GND (ns 5 amb ( 100 k EXT ( EXT ( EXT ( EXT Fig 7. Typical output pulse width as a function of the ...

Page 13

... Philips Semiconductors 13. Package outline DIP16: plastic dual in-line package; 16 leads (300 mil); long body pin 1 index 1 DIMENSIONS (inch dimensions are derived from the original mm dimensions UNIT max. min. max. mm 4.7 0.51 3.7 inches 0.19 0.02 0.15 Note 1. Plastic or metal protrusions of 0.25 mm (0.01 inch) maximum per side are not included. ...

Page 14

... Philips Semiconductors SO16: plastic small outline package; 16 leads; body width 3 pin 1 index 1 DIMENSIONS (inch dimensions are derived from the original mm dimensions) A UNIT max. 0.25 1.45 mm 1.75 0.25 0.10 1.25 0.010 0.057 inches 0.069 0.01 0.004 0.049 Note 1. Plastic or metal protrusions of 0.15 mm (0.006 inch) maximum per side are not included. ...

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