NTE288 NTE Electronics, Inc., NTE288 Datasheet - Page 2
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NTE288
Manufacturer Part Number
NTE288
Description
Transistor; PNP; Silicon; 300 V (Max.); 300 V (Max.); 5 V (Max.); 500 mA (Max.)
Manufacturer
NTE Electronics, Inc.
Type
General Purpose, High Voltager
Datasheet
1.NTE287.pdf
(2 pages)
Specifications of NTE288
Complement To
NPN
Current, Collector
500 mA
Current, Collector Cutoff
0.25 μA
Current, Continuous Collector
500 mA
Current, Gain
25
Frequency
50 MHz
Material Type
Silicon
Package Type
TO-92
Polarity
PNP
Power Dissipation
625 mW
Primary Type
Si
Resistance, Thermal, Junction To Case
83.3 °C/mW
Temperature Range, Junction, Operating
-55 to +150 °C
Thermal Resistance, Junction To Ambient
200 °C/mW
Transistor Polarity
PNP
Voltage, Breakdown, Collector To Emitter
300 V
Voltage, Collector To Base
300 V
Voltage, Collector To Emitter
300 V
Voltage, Collector To Emitter, Saturation
0.5 V
Voltage, Emitter To Base
5 V
Voltage, Saturation, Collector To Emitter
0.5 V
Electrical Characteristics (Cont’d): (T
Note 1. Pulse Test: Pulse Width
ON Characteristics (Note 1)
DC Current Gain
Collector–Emitter Saturation Voltage
Base–Emitter Saturation Voltage
Small–Signal Characteristics
Current Gain – Bandwidth Product
Collector–Base Capacitance
NTE287
NTE288
NTE288
NTE287 & NTE288
NTE287
Parameter
.105 (2.67) Max
.205 (5.2) Max
.100 (2.54)
(5.33)
(12.7)
.210
Max
.500
Min
Symbol
V
V
300 s, Duty Cycle
CE(sat)
BE(sat)
h
C
f
FE
T
cb
A
E B C
= +25 C unless otherwise specified)
I
I
I
I
I
I
V
C
C
C
C
C
C
CB
= 1mA, V
= 10mA, V
= 30mA, V
= 20mA, I
= 20mA, I
= 10mA, V
= 20V, I
Test Conditions
.050 (1.27)
CE
B
B
E
.135 (3.45) Min
CE
(4.2)
.165
CE
CE
Max
.105 (2.67) Max
= 2mA
= 2mA
= 0, f = 1MHz
2%.
= 10V
= 20V, f = 100MHz
= 10V
= 10V
Seating Plane
.021 (.445) Dia Max
Min Typ Max Unit
25
40
40
25
50
–
–
–
–
–
–
–
–
–
–
–
–
–
0.5
0.9
–
–
–
–
–
3
6
MHz
pF
pF
V
V