NTE288 NTE Electronics, Inc., NTE288 Datasheet - Page 2

• Manufacturer Part Number: NTE288
• Description: Transistor; PNP; Silicon; 300 V (Max.); 300 V (Max.); 5 V (Max.); 500 mA (Max.)
• Manufacturer: NTE Electronics, Inc.
• Type: General Purpose, High Voltager

Specifications of NTE288

• Complement To: NPN
• Current, Collector: 500 mA
• Current, Collector Cutoff: 0.25 μA
• Current, Continuous Collector: 500 mA
• Current, Gain: 25
• Frequency: 50 MHz
• Material Type: Silicon
• Package Type: TO-92
• Polarity: PNP
• Power Dissipation: 625 mW
• Primary Type: Si
• Resistance, Thermal, Junction To Case: 83.3 °C/mW
• Temperature Range, Junction, Operating: -55 to +150 °C
• Thermal Resistance, Junction To Ambient: 200 °C/mW
• Transistor Polarity: PNP
• Voltage, Breakdown, Collector To Emitter: 300 V
• Voltage, Collector To Base: 300 V
• Voltage, Collector To Emitter: 300 V
• Voltage, Collector To Emitter, Saturation: 0.5 V
• Voltage, Emitter To Base: 5 V
• Voltage, Saturation, Collector To Emitter: 0.5 V

Electrical Characteristics (Cont’d): (T
Note 1. Pulse Test: Pulse Width
ON Characteristics (Note 1)
DC Current Gain
Collector–Emitter Saturation Voltage
Base–Emitter Saturation Voltage
Small–Signal Characteristics
Current Gain – Bandwidth Product
Collector–Base Capacitance
NTE287
NTE288
NTE288
NTE287 & NTE288
NTE287
Parameter
.105 (2.67) Max
.205 (5.2) Max
.100 (2.54)
(5.33)
(12.7)
.210
Max
.500
Min
Symbol
V
V
300 s, Duty Cycle
CE(sat)
BE(sat)
h
C
f
FE
T
cb
A
E B C
= +25 C unless otherwise specified)
I
I
I
I
I
I
V
C
C
C
C
C
C
CB
= 1mA, V
= 10mA, V
= 30mA, V
= 20mA, I
= 20mA, I
= 10mA, V
= 20V, I
Test Conditions
.050 (1.27)
CE
B
B
E
.135 (3.45) Min
CE
(4.2)
.165
CE
CE
Max
.105 (2.67) Max
= 2mA
= 2mA
= 0, f = 1MHz
2%.
= 10V
= 20V, f = 100MHz
= 10V
= 10V
Seating Plane
.021 (.445) Dia Max
Min Typ Max Unit
25
40
40
25
50
–
–
–
–
–
–
–
–
–
–
–
–
–
0.5
0.9
–
–
–
–
–
3
6
MHz
pF
pF
V
V