NTE182 NTE Electronics, Inc., NTE182 Datasheet
NTE182
Manufacturer Part Number
NTE182
Description
Transistor; TO127; NPN; 60; 70 V; 5 V; 10 A; 90 W; -55 to 150 degC; 1.39 degC/
Manufacturer
NTE Electronics, Inc.
Type
Amplifier, Switchr
Datasheet
1.NTE182.pdf
(2 pages)
Specifications of NTE182
Current, Collector
10 A
Current, Collector Cutoff
700 μA
Current, Continuous Collector
10 A
Current, Gain
20 to 100
Device Dissipation
90 W
Frequency
2 MHz
Gain, Dc Current, Maximum
100
Gain, Dc Current, Minimum
20
Package Type
TO-127
Polarity
NPN
Power Dissipation
90 W
Primary Type
Si
Resistance, Thermal, Junction To Case
1.39 °C/W
Temperature Range, Junction, Operating
-55 to 150 °C
Transistor Polarity
NPN
Voltage, Breakdown, Collector To Emitter
60 V
Voltage, Collector To Base
70 V
Voltage, Collector To Emitter
60 V
Voltage, Collector To Emitter, Saturation
8 V
Voltage, Emitter To Base
5 V
Description:
The NTE182 (NPN) and NTE183 (PNP) are silicon transistors in a TO127 type case designed for use
in general purpose amplifier and switching applications.
Features:
D DC Current Gain Specified to 10A
D High Current Gain−Bandwidth Product: f
Absolute Maximum Ratings:
Collector−Emitter Voltage, V
Collector−Base Voltage, V
Emitter−Base Voltage, V
Collector Current, I
Base Current, I
Total Device Dissipation (T
Operating Junction Temperature Range, T
Storage Temperature Range, T
Thermal Resistance, Junction−to−Case, R
Electrical Characteristics: (T
Note 1. Pulse Test: Pulse Width ≤ 300µs. Duty Cycle ≤ 2%.
OFF Characteristics
Collector−Emitter Sustaining Voltage V
Collector Cutoff Current
Emitter Cutoff Current
Derate Above 25°C
Parameter
B
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Silicon Complementary Transistors
General Purpose Amplifier, Switch
EB
CB
C
NTE182 (NPN) & NTE183 (PNP)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CEO
= +25°C), P
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
stg
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
=+25°C unless otherwise specified)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Symbol
CEO(sus)
I
I
I
I
CEO
CEX
CBO
EBO
D
J
thJC
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
T
I
V
V
V
T
V
V
V
C
C
CE
CE
CE
CB
CB
BE
= 2MHz (Min) @ I
= 200mA, I
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= +150°C
= 30V, I
= 70V, V
= 70V, V
= 70V, I
= 70V, I
= 5V, I
Test Conditions
C
B
E
E
BE(off)
BE(off)
= 0
B
= 0
= 0
= 0, T
= 0, Note 1
= 1.5V
= 1.5V,
C
C
= +150°C
= 500mA
Min Typ Max Unit
60
−
−
−
−
−
−
−
−
−
−
−
−
−
−55° to +150°C
−55° to +150°C
700
1.0
5.0
1.0
5.0
10
−
0.72W/°C
1.39°C/W
mA
mA
mA
mA
mA
µA
90W
V
60V
70V
10A
5V
6A
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NTE182 Summary of contents
Page 1
... NTE182 (NPN) & NTE183 (PNP) Silicon Complementary Transistors General Purpose Amplifier, Switch Description: The NTE182 (NPN) and NTE183 (PNP) are silicon transistors in a TO127 type case designed for use in general purpose amplifier and switching applications. Features Current Gain Specified to 10A D High Current Gain−Bandwidth Product: f Absolute Maximum Ratings: Collector− ...
Page 2
Electrical Characteristics (Cont’d): (T Parameter ON Characteristics (Note 1) DC Current Gain Base−Emitter ON Voltage Collector−Emitter Saturation Voltage Dynamic Characteristics Current Gain−Bandwidth Product Note 1. Pulse Test: Pulse Width ≤ 300µs. Duty Cycle ≤ 2%. Heat Sink Contact Area (Bottom) ...