NTE253 NTE Electronics, Inc., NTE253 Datasheet
NTE253
Manufacturer Part Number
NTE253
Description
Transistor; TO126; NPN; 80; 80; 5 V; 4 A; 40 W; -65 to 150 degC; 3.23 degC/W;
Manufacturer
NTE Electronics, Inc.
Type
Amplifier, Powerr
Datasheet
1.NTE253.pdf
(2 pages)
Specifications of NTE253
Current, Collector Cutoff
100 μA
Current, Continuous Collector
4 A
Current, Gain
100
Current, Input
100 mA
Current, Output
4 A
Device Dissipation
40 W
Gain, Dc Current, Minimum
750
Package Type
TO-126
Polarity
NPN
Power Dissipation
40 W
Primary Type
Si
Resistance, Thermal, Junction To Case
3.23 °C⁄W
Temperature Range, Junction, Operating
-65 to +150 °C
Transistor Polarity
NPN
Voltage, Breakdown, Collector To Emitter
80 V
Voltage, Collector To Base
80 V
Voltage, Collector To Emitter
80 V
Voltage, Collector To Emitter, Saturation
3 V
Voltage, Emitter To Base
5 V
Voltage, Input
5 V
Voltage, Output
80 V
Description:
The NTE253 (NPN) and NTE254 (PNP) are silicon complementary Darlington transistors in a TO126
type case designed for general–purpose amplifier and low–speed switching applications.
Features:
D High DC Current Gain: h
D Monolithic Construction with Built–In Base–Emitter Resistors to Limit Leakage Multiplication
Absolute Maximum Ratings: (T
Collector–Emitter Voltage, V
Collector–Base Voltage, V
Emitter–Base Voltage, V
Collector Current, I
Base Current, I
Total Power Dissipation (T
Operating Junction Temperature Range, T
Storage Temperature Range, T
Thermal Resistance, Junction–to–Case, R
Electrical Characteristics: (T
OFF Characteristics
Collector–Emitter Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
Derate Above 25 C
Parameter
B
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Silicon Complementary Transistors
EB
CB
C
NTE253 (NPN) & NTE254 (PNP)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= +25 C), P
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
FE
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Darlington Power Amplifier
stg
A
= 2000 (Typ) @ I
V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Symbol
= +25 C unless otherwise specified)
(BR)CEO
A
I
I
I
CEO
CBO
EBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= +25 C unless otherwise specified)
D
I
V
V
V
V
C
J
thJC
CE
CE
CE
BE
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= 50mA, I
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= 5V, I
= 80V, I
= 80V, I
= 80V, I
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Test Conditions
C
= 2A
C
B
B
E
E
= 0
= 0, Note 1
= 0
= 0
= 0, T
C
= +100 C
Min
80
–
–
–
–
Typ
–
–
–
–
–
–65 to +150 C
–65 to +150 C
Max
100
100
500
2.0
–
0.32W/ C
3.23 C/W
100mA
Unit
mA
V
40W
A
A
A
80V
80V
5V
4A
Related parts for NTE253
Image
Part Number
Description
Manufacturer
Datasheet
Request
R
Part Number:
Description:
nte quick cross for windows, cd, version 15
Manufacturer:
NTE Electronics, Inc.
Part Number:
Description:
NTE829, Integrated Circuit Electronics Attenuator, 90dB @ 1kHz
Manufacturer:
NTE Electronics, Inc.
Datasheet:
Part Number:
Description:
DIODE, SMALL SIGNAL; 200 MA @ +25C IF; 100 V (MIN.) @ 100 UA, +25C; DO-35
Manufacturer:
NTE Electronics, Inc.
Datasheet:
Part Number:
Description:
DIODE, SMALL SIGNAL; 200 MA @ +25C IF; 100 V (MIN.) @ 100 UA, +25C; DO-35
Manufacturer:
NTE Electronics, Inc.
Part Number:
Description:
Transistor; NPN; 100 V (Max.); 100 V (Max.); 5 V (Max.); 15 A (Max.); 40 @ 4 V
Manufacturer:
NTE Electronics, Inc.
Datasheet:
Part Number:
Description:
Diode, Zener, 00.0V, 1W, DO-41; Voltage, Zener; Zener Impedance, Maximum
Manufacturer:
NTE Electronics, Inc.
Part Number:
Description:
TRANSISTOR, PNP, GENERAL PURPOSE, PKG STYLE TO-92
Manufacturer:
NTE Electronics, Inc.
Part Number:
Description:
CIRCUIT; TO-220; 40V; 0.01 %/V (TYP.) LINE REGULATION; 18 MV%/VO (TYP.)
Manufacturer:
NTE Electronics, Inc.
Part Number:
Description:
Relay; SSR; Power; SPST-NO; Cur-Rtg 40A; Ctrl-V 3.5-32DC; Vol-Rtg 0-100DC; Pnl-Mnt
Manufacturer:
NTE Electronics, Inc.
Datasheet:
Part Number:
Description:
Diode, Zener; 12 V @ 21 mA; 1 W @ +50C; DO-41; 700 Ohms @ 0.25 mA; +200; -65
Manufacturer:
NTE Electronics, Inc.
Part Number:
Description:
TRANSISTOR, N-CHANNEL; N-CHANNEL; 1.2 OHMS (TYP.); 60V; +/- 20V; 115MA DRAIN
Manufacturer:
NTE Electronics, Inc.
Part Number:
Description:
Relay; SSR; Power; SPST-NO; Cur-Rtg 40A; Ctrl-V 3-32DC; Vol-Rtg 80-530AC; Pnl-Mnt
Manufacturer:
NTE Electronics, Inc.
Datasheet:
Part Number:
Description:
Specifications: Manufacturer: NTE ; RoHS: Details
Manufacturer:
NTE Electronics, Inc.
Datasheet:
Part Number:
Description:
Rectifier, Bridge; Silicon Bridge Rectifier; 200 V; 400 A; 25; Thru Hole Mount
Manufacturer:
NTE Electronics, Inc.
Datasheet:
NTE253 Summary of contents
Page 1
... NTE253 (NPN) & NTE254 (PNP) Silicon Complementary Transistors Description: The NTE253 (NPN) and NTE254 (PNP) are silicon complementary Darlington transistors in a TO126 type case designed for general–purpose amplifier and low–speed switching applications. Features: D High DC Current Gain Monolithic Construction with Built–In Base–Emitter Resistors to Limit Leakage Multiplication Absolute Maximum Ratings: (T Collector– ...
Page 2
... NTE253 & NTE254 Base–Emitter ON Voltage NTE253 NTE254 NTE253 & NTE254 Dynamic Characteristics Small–Signal Current Gain Note 1. Pulse Test: Pulse Width Note 2. NTE253MCP is a matched complementary pair containing 1 each of NTE253 (NPN) and NTE254 (PNP). NTE253 B NTE254 B = +25 C unless otherwise specified) A ...