SI4840DY-T1-E3 Siliconix / Vishay, SI4840DY-T1-E3 Datasheet
SI4840DY-T1-E3
Manufacturer Part Number
SI4840DY-T1-E3
Description
MOSFET, Power; N-Ch; VDSS 40V; RDS(ON) 0.0075Ohm; ID 10A; SO-8; PD 1.56W; VGS +/-20V
Manufacturer
Siliconix / Vishay
Datasheet
1.SI4840DY-T1-E3.pdf
(2 pages)
Specifications of SI4840DY-T1-E3
Channel Type
N
Current, Drain
12.00 A
Gate Charge, Total
18.5 nC
Package Type
SO-8
Polarization
N-Channel
Power Dissipation
1.56 W
Resistance, Drain To Source On
0.012 Ohm
Temperature, Operating, Maximum
+150 °C
Temperature, Operating, Minimum
-55 °C
Time, Turn-off Delay
50 ns
Time, Turn-on Delay
15 ns
Transconductance, Forward
50 S
Voltage, Breakdown, Drain To Source
40 V
Voltage, Drain To Source
40 V
Voltage, Forward, Diode
0.75 V
Voltage, Gate To Source
±20 V
Lead Free Status / Rohs Status
RoHS Compliant part
Electrostatic Device
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
SI4840DY-T1-E3
Manufacturer:
VISHAY
Quantity:
282
Company:
Part Number:
SI4840DY-T1-E3
Manufacturer:
VISHAY
Quantity:
20 000
Part Number:
SI4840DY-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Notes
a.
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS (T
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Continuous Drain Current (T
Pulsed Drain Current
Avalanche Current
Avalanche Energy (Single Pulse)
Continuous Source Current (Diode Conduction)
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
M
Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain)
V
Surface Mounted on 1” x 1” FR4 Board.
i
DS
40
40
(V)
J
ti
Ordering Information: Si4840DY
t A bi
G
S
S
S
J
J
a
a
0.012 @ V
0.009 @ V
= 150_C)
= 150_C)
t
a
a
Parameter
Parameter
r
DS(on)
1
2
3
4
a
a
GS
GS
Si4840DY-T1 (with Tape and Reel)
Si4840DY—E3 (Lead (Pb)-Free)
Si4840DY-T1—E3 (Lead (Pb)-Free with Tape and Reel)
Top View
(W)
N-Channel 40-V (D-S) MOSFET
= 4.5 V
SO-8
= 10 V
a
8
7
6
5
A
D
D
D
D
= 25_C UNLESS OTHERWISE NOTED)
Steady State
Steady State
L = 0 1 mH
L = 0.1 mH
T
T
T
T
t v 10 sec
A
A
A
A
I
= 25_C
= 70_C
= 25_C
= 70_C
D
14
12
(A)
Symbol
Symbol
T
R
R
R
V
J
V
E
I
I
P
P
DM
, T
I
I
AS
I
thJA
thJF
DS
GS
D
D
AS
S
D
D
stg
FEATURES
D TrenchFETr Power MOSFET
D 100% R
10 secs
Typical
2.8
3.1
2.0
14
11
33
65
17
g
Tested
−55 to 150
G
"20
40
50
30
45
N-Channel MOSFET
Steady State
Maximum
Vishay Siliconix
1.56
1.4
1.0
10
40
80
21
D
S
8
Si4840DY
Available
Unit
Pb-free
Unit
_C/W
C/W
mJ
_C
W
W
V
V
A
A
A
1
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SI4840DY-T1-E3 Summary of contents
Page 1
... SO Top View Ordering Information: Si4840DY Si4840DY-T1 (with Tape and Reel) Si4840DY—E3 (Lead (Pb)-Free) Si4840DY-T1—E3 (Lead (Pb)-Free with Tape and Reel) ABSOLUTE MAXIMUM RATINGS (T Parameter Drain-Source Voltage Gate-Source Voltage a a Continuous Drain Current (T Continuous Drain Current (T = 150_C) = 150_C Pulsed Drain Current ...
Page 2
... Si4840DY Vishay Siliconix SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED) J Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current Zero Gate Voltage Drain Current a On-State Drain Current a a Drain-Source On-State Resistance Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic ...