NTE332 NTE Electronics, Inc., NTE332 Datasheet - Page 2

• Manufacturer Part Number: NTE332
• Description: Transistor; PNP; Silicon; TO-220; 100 V; 100 V; 5 V; 15 A; 5 A; 90 W; 150 degC
• Manufacturer: NTE Electronics, Inc.
• Type: Audio Amplifier, Powerr

Specifications of NTE332

• Complement To: NPN
• Current, Base: 5 A
• Current, Collector: 15 A
• Current, Collector Cutoff: 20 μA @ VCB == 90V, IE == 0
• Current, Continuous Collector: 15 A
• Current, Emitter: 15 A
• Current, Gain: 40 to 250
• Frequency: 3 MHz
• Material Type: Silicon
• Package Type: TO-220
• Polarity: PNP
• Power Dissipation: 90 W
• Primary Type: Si
• Resistance, Thermal, Junction To Case: 1.4 °C/W
• Temperature Range, Junction, Operating: 150 °C
• Transistor Polarity: PNP
• Voltage, Breakdown, Collector To Emitter: 100 V
• Voltage, Collector To Base: 100 V
• Voltage, Collector To Emitter: 100 V
• Voltage, Collector To Emitter, Saturation: 3 V
• Voltage, Emitter To Base: 5 V
• Voltage, Saturation, Collector To Emitter: 1.5 V (Max.) @ IC == 3A, IB == 0.3A
• Lead Free Status / Rohs Status: RoHS Compliant part

Electrical Characteristics (Cont’d): (T
Note 1. Pulsed; Pulse Duration = 300 s, Duty Cycle = 1.5%.
Base–Emitter Saturation Voltage
Base–Emitter Voltage
DC Current Gain
Transistion Frequency
Parameter
.147 (3.75)
.070 (1.78) Max
Dia Max
.100 (2.54)
Base
Symbol
V
BE(sat)
V
h
f
FE
BE
T
C
I
I
I
I
I
I
= +25 C unless otherwise specified)
.420 (10.67)
C
C
C
C
C
C
= 10A, I
= 5A, V
= 0.5A, V
= 5A, V
= 10A, V
= 0.5A, V
Max
Test Conditions
CE
CE
B
CE
CE
CE
= 2.5A, Note 1
= 4V, Note 1
= 4V, Note 1
= 4V, Note 1
= 4V, Note 1
= 4V
.250 (6.35)
Max
Collector/Tab
Emitter
.110 (2.79)
(12.7)
(12.7)
.500
.500
Max
Min
Min
40
15
–
–
5
3
Typ
–
–
–
–
–
–
Max Unit
250
150
2.5
1.5
–
–
MHz
V
V