NTE154 NTE Electronics, Inc., NTE154 Datasheet - Page 2

• Manufacturer Part Number: NTE154
• Description: Transistor, NPN; TO-39; NPN; 300 V; 300 V; 7 V; 7 W @ 25 degC; 0 to 200 degC
• Manufacturer: NTE Electronics, Inc.
• Type: High Voltager

Specifications of NTE154

• Current, Collector: 0.2 A
• Current, Gain: 100
• Device Dissipation: 7 W
• Frequency: 80 MHz
• Gain, Dc Current, Minimum: 20
• Package Type: TO-39
• Polarity: NPN
• Power Dissipation: 1 W
• Primary Type: Si
• Resistance, Thermal, Junction To Case: 25 °C⁄W
• Temperature, Junction, Operating: 0 to +200 °C
• Thermal Resistance, Junction To Ambient: 175 °C⁄W
• Transistor Polarity: NPN
• Voltage, Breakdown, Collector To Base: 300 V
• Voltage, Breakdown, Collector To Emitter: 300 V
• Voltage, Breakdown, Emitter To Base: 7 V
• Voltage, Collector To Base: 300 V
• Voltage, Collector To Emitter: 300 V
• Voltage, Collector To Emitter, Saturation: 0.35 V
• Voltage, Emitter To Base: 7 V

Electrical Characteristics: (T
Note 2. This rating refers to a high current point where collector to emitter voltage is lowest.
Note 5. Pulse Conditions: Length = 300 s, Duty Cycle = 1%.
Collector Base Breakdown Voltage
Emitter Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Collector Emitter Sustaining Voltage
Base Emitter Saturating Voltage
Collector Emitter Saturating Voltage
High Frequency Current Gain
Collector Base Capacitance
Emitter Base Capacitance
Parameter
A
= +25 C unless otherwise specified)
Emitter
V
V
V
Symbol
V
V
CEO(sus)
(BR)CBO
(BR)EBO
(12.7)
I
I
BE(sat)
CE(sat)
(6.6)
.260
Max
.500
h
C
C
CBO
EBO
Min
h
FE
fe
cb
eb
45
I
I
I
I
I
I
I
I
I
I
I
I
I
I
R
I
I
C
E
E
E
C
C
C
C
C
C
C
C
C
C
E
C
L
= 100 A, I
= 0, V
= 0, V
= 0, V
= 100 A, I
= 0, V
= 1mA, V
= 10mA, V
= 30mA, V
= 5mA, I
= 20mA, I
= 20mA, I
= 15mA, V
= 3mA, V
= 30mA, V
= 0, V
.031 (.793)
= 9k
CB
CB
EB
CB
EB
Test Conditions
B
= 200V, T
= 200V
= 6V
= 20V
= 500mV
CE
CE
B
B
E
C
= 0, Note 2, Note 5
.018 (0.45)
CE
CE
CE
CE
= 2mA, Note 5
= 2mA, Note 5
= 0
= 0
= 20V
= 270V, f = 20MHz
Base
Collector/Case
= 20V, Note 5
= 20V, Note 5
= 150V, f = 20MHz
= 30V, f = 20MHz,
.370 (9.39) Dia Max
.355 (9.03) Dia Max
A
= +125 C
Min
300
300
2.5
2.0
2.0
20
40
40
7
–
–
–
–
–
–
–
0.35
Typ
100
100
0
1.0
0.2
1.0
4.0
2.5
4.0
2.5
50
45
–
–
–
.74
Max
0.85
100
100
5.0
1.0
3.0
70
–
–
–
–
–
–
–
–
–
Unit
nA
nA
pF
pF
V
V
V
V
V
A