SI9407AEY-T1-E3 Siliconix / Vishay, SI9407AEY-T1-E3 Datasheet
SI9407AEY-T1-E3
Manufacturer Part Number
SI9407AEY-T1-E3
Description
MOSFET, Power; P-Ch; VDSS -60V; RDS(ON) 0.12Ohm; ID +/-3.5A; SO-8; PD 3W; VGS +/-20V; gF
Manufacturer
Siliconix / Vishay
Datasheet
1.SI9407AEY-T1-E3.pdf
(2 pages)
Specifications of SI9407AEY-T1-E3
Channel Type
P
Current, Drain
±3.5 A
Gate Charge, Total
30 nC
Package Type
SO-8
Polarization
P-Channel
Power Dissipation
3 W
Resistance, Drain To Source On
0.15 Ohm
Temperature, Operating, Maximum
+175 °C
Temperature, Operating, Minimum
-55 °C
Time, Turn-off Delay
35 ns
Time, Turn-on Delay
8 ns
Transconductance, Forward
8 S
Voltage, Breakdown, Drain To Source
-60 V
Voltage, Drain To Source
–60 V
Voltage, Forward, Diode
-1.2 V
Voltage, Gate To Source
±20 V
Lead Free Status / Rohs Status
RoHS Compliant part
Electrostatic Device
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI9407AEY-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Part Number:
SI9407AEY-T1-E3-BF-SN
Manufacturer:
VISHAY/威世
Quantity:
20 000
Notes
a.
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS (T
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Maximum Junction-to-Ambient
V
Surface Mounted on FR4 Board, t v 10 sec.
DS
−60
60
(V)
Ordering Information: Si9407AEY
J
J
a
a
0.120 @ V
0.15 @ V
= 150_C)
= 150_C)
a
G
S
S
S
r
P-Channel 60-V (D-S), 175_C MOSFET
DS(on)
1
2
3
4
GS
Parameter
Parameter
a
a
GS
= −4.5 V
(W)
= −10 V
Si9407AEY—T1
Si9407AEY—E3 (Lead (Pb)-Free with Tape and Reel)
Si9407AEY -T1—E3 (Lead (Pb)-Free) with Tape and Reel)
Top View
SO-8
a
8
7
6
5
A
= 25_C UNLESS OTHERWISE NOTED)
D
D
D
D
I
D
"3.5
"3.1
(A)
T
T
T
T
A
A
A
A
= 25_C
= 70_C
= 25_C
= 70_C
Symbol
Symbol
FEATURES
D TrenchFETr Power MOSFET
D 175_C Maximum Junction
T
R
V
J
V
I
P
P
DM
, T
I
I
I
thJA
DS
GS
Temperature
D
D
S
D
D
stg
G
P-Channel MOSFET
S
D
−55 to 175
Limit
Vishay Siliconix
Limit
"3.5
"3.0
"20
"30
−2.5
−60
3.0
2.1
50
Si9407AEY
Available
Pb-free
Unit
Unit
_C/W
_C
W
W
V
V
A
A
1
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SI9407AEY-T1-E3 Summary of contents
Page 1
... Top View Ordering Information: Si9407AEY Si9407AEY—T1 Si9407AEY—E3 (Lead (Pb)-Free with Tape and Reel) Si9407AEY -T1—E3 (Lead (Pb)-Free) with Tape and Reel) ABSOLUTE MAXIMUM RATINGS (T Parameter Drain-Source Voltage Gate-Source Voltage a a Continuous Drain Current (T Continuous Drain Current (T = 150_C) = 150_C Pulsed Drain Current ...
Page 2
... Si9407AEY Vishay Siliconix SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED) J Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current Zero Gate Voltage Drain Current b On-State Drain Current b b Drain Source On State Resistance Drain-Source On-State Resistance b Forward Transconductance b Diode Forward Voltage ...