NTE219 NTE Electronics, Inc., NTE219 Datasheet - Page 2

• Manufacturer Part Number: NTE219
• Description: Transistor; PNP; Silicon; TO3; 100 V; 60 V; 7 V; 15 A; 7 A; 115 W; 1.52 degC/W
• Manufacturer: NTE Electronics, Inc.
• Type: Audio Amplifier, Powerr

Specifications of NTE219

• Complement To: NPN
• Current, Base: 7 A
• Current, Collector: 15 A
• Current, Collector Cutoff: 1 mA
• Current, Continuous Collector: 15 A
• Current, Gain: 5
• Frequency: 2.5 MHz
• Material Type: Silicon
• Package Type: TO-3
• Polarity: PNP
• Power Dissipation: 115 W
• Primary Type: Si
• Resistance, Thermal, Junction To Case: 1.52 °C/W
• Temperature Range, Junction, Operating: -65 to +200 °C
• Transistor Polarity: PNP
• Voltage, Breakdown, Collector To Emitter: 60 V
• Voltage, Collector To Base: 100 V
• Voltage, Collector To Emitter: 60 V
• Voltage, Collector To Emitter, Saturation: 3 V
• Voltage, Emitter To Base: 7 V
• Voltage, Saturation, Collector To Emitter: 1.5 V

Electrical Characteristics (Cont’d): (T
Note 1. Pulse Test: Pulse Width
Note 2. NTE130MP is a matched pair of NTE130 with their DC Current Gain (h
Note 3. NTE219MCP is a matched complementary pair containing 1 each of NTE219 (PNP) and
ON Characteristics (Note 1)
DC Current Gain
Collector–Emitter Saturation Voltage
Base–Emitter ON Voltage
Second Breakdown
Second Breakdown Collector Current
Dynamic Characteristics
Current Gain–Bandwidth Product
Small–Signal Current Gain
Small–Signal Current Gain Cutoff
with Base Forward Biased
Frequency
.350 (8.89)
10% of each other.
NTE130 (NPN).
Parameter
.215 (5.45)
(10.92)
.430
.312 (7.93) Min
Emitter
.135 (3.45) Max
Base
Symbol
V
V
CE(sat)
BE(on)
h
I
f
h
s/b
f
hfe
FE
T
fe
300 s. Duty Cycle
C
I
I
I
I
I
V
I
I
V
C
C
C
C
C
C
C
CE
CE
1.187 (30.16)
=+25 C unless otherwise specified)
= 4A, V
= 10A, V
= 4A, I
= 10A, I
= 4A, V
= 500mA, V
= 1A, V
.875 (22.2)
Dia Max
= 40V, t = 1.0s; Nonrepetitive
= 4V, I
Collector/Case
B
CE
CE
CE
B
= 400mA
C
CE
Test Conditions
= 3.3A
(16.9)
= 1A, f = 1kHz
= 4V
= 4V
= 4V, f = 1kHz
.665
.040 (1.02)
= 4V
CE
= 10V, f = 1MHz
.525 (13.35) R Max
2%.
.156 (3.96) Dia
(2 Holes)
.188 (4.8) R Max
Seating
Plane
2.87
Min
2.5
20
15
10
5
–
–
–
FE
) matched to within
Typ
–
–
–
–
–
–
–
–
–
Max
120
1.1
3.0
1.5
70
–
–
–
–
MHz
Unit
kHz
V
V
V
A