NTE2311 NTE Electronics, Inc., NTE2311 Datasheet

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NTE2311

Manufacturer Part Number
NTE2311
Description
Transistor, NPN; TO-218; NPN; 450 V; 7 V; 15 A; 150 W; -65 to 175 degC; 1 degC
Manufacturer
NTE Electronics, Inc.
Type
High Voltage, Switchr
Datasheet

Specifications of NTE2311

Current, Collector
15 A
Current, Gain
10
Device Dissipation
150 W
Gain, Dc Current, Minimum
10
Package Type
TO-218
Polarity
NPN
Power Dissipation
150 W
Primary Type
Si
Resistance, Thermal, Junction To Case
1 °C/W
Temperature, Junction, Operating
-65 to 175 °C
Transistor Polarity
NPN
Voltage, Breakdown, Collector To Emitter
450 V
Voltage, Breakdown, Emitter To Base
30 V (Max.)
Voltage, Collector To Emitter
450 V
Voltage, Collector To Emitter, Saturation
5 V
Voltage, Emitter To Base
7 V
Lead Free Status / Rohs Status
RoHS Compliant part
Description:
The NTE2311 is a silicon NPN transistor in a TO218 type case designed for use in high voltage, high
speed switching applications.
Features:
D High Blocking Capability: V
D Wide Surge Area: I
Applications:
D Switchmode Power Supply
D DC/DC and DC/AC Converters
D Motor Control
Absolute Maximum Ratings: (T
Collector–Emitter Voltage, V
Collector–Emitter Voltage (V
Emitter–Base Voltage, V
Collector Current (t
Base Current (t
Power Dissipation, P
Operating Junction Temperature Range, T
Thermal Resistance, Junction–to–Case, R
Electrical Characteristics: (T
OFF Characteristics
Collector–Emitter Sustaining Voltage V
Emitter–Base Breakdown Voltage
Collector Cutoff Current
Continuous
Peak
Continuous
Peak
T
T
C
C
= +25 C
= +60 C
Parameter
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
p
5ms), I
p
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
tot
5ms), I
CSM
EBO
High Voltage, High Speed Switch
B
= 55A @ 350V
CEO
BE
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
C
CEX
J
= –2.5V), V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= +25 C unless otherwise specified)
Silicon NPN Transistor
C
V
Symbol
= 1000V
= +25 C unless otherwise specified)
CEO(sus)
(BR)EBO
I
I
CER
CEX
J
thJC
CEX
NTE2311
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
I
I
T
T
T
T
B
C
J
J
J
J
= 0, I
= 0, I
= +25 C
= +125 C
= +25 C
= +125 C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Test Conditions
C
E
= 200mA, L = 25mH
= 50mA
V
V
V
R
CE
BE
CE
BE
= –2.5V
= V
= V
= 10
CEX
CEX
,
,
Min
450
7
Typ
–65 to +175 C
Max Unit
0.2
2.0
0.5
4.0
30
1 C/W
1000V
150W
115W
450V
mA
mA
mA
mA
V
V
15A
30A
20A
7V
4A

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NTE2311 Summary of contents

Page 1

... High Voltage, High Speed Switch Description: The NTE2311 is a silicon NPN transistor in a TO218 type case designed for use in high voltage, high speed switching applications. Features: D High Blocking Capability Wide Surge Area: I CSM Applications: D Switchmode Power Supply D DC/DC and DC/AC Converters ...

Page 2

Electrical Characteristics (Cont’d): (T Parameter OFF Characteristics (Cont,d) Emitter Cutoff Current ON Characteristics (Note 1) DC Current Gain Collector–Emitter Saturation Voltage Base–Emitter Saturation Voltage Switching Characteristics (Switching Times on Resistive Load) Turn–On Time Storage Time Fall Time Switching Characteristics (Switching ...

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