NTE2383 NTE Electronics, Inc., NTE2383 Datasheet - Page 3

• Manufacturer Part Number: NTE2383
• Description: MOSFET, Power; P-Ch; VDSS 100V; RDS(ON) 0.3Ohm; ID 10.5A; TO-220; PD 75W; VGS +/-20V
• Manufacturer: NTE Electronics, Inc.

Specifications of NTE2383

• Current, Drain: 10.5 A
• Gate Charge, Total: 58 nC
• Package Type: TO-220
• Polarization: P-Channel
• Power Dissipation: 75 W
• Resistance, Drain To Source On: 0.3 Ohm
• Resistance, Thermal, Junction To Case: 2.5 °C⁄W
• Temperature, Operating, Maximum: +150 °C
• Temperature, Operating, Minimum: -55 °C
• Time, Turn-off Delay: 140 ns
• Time, Turn-on Delay: 60 ns
• Transconductance, Forward: 2 mhos
• Transistor Type: N Channel Enhancement Mode
• Voltage, Breakdown, Drain To Source: 100 V
• Voltage, Forward, Diode: 6.3 V
• Voltage, Gate To Source: ±20 V

.147 (3.75) Dia Max
.070 (1.78) Max
.100 (2.54)
Gate
.420 (10.67)
Max
.250 (6.35)
Max
Drain/Tab
Source
(12.7)
(12.7)
.110 (2.79)
.500
Max
.500
Min