NTE2383 NTE Electronics, Inc., NTE2383 Datasheet - Page 3
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NTE2383
Manufacturer Part Number
NTE2383
Description
MOSFET, Power; P-Ch; VDSS 100V; RDS(ON) 0.3Ohm; ID 10.5A; TO-220; PD 75W; VGS +/-20V
Manufacturer
NTE Electronics, Inc.
Datasheet
1.NTE2383.pdf
(3 pages)
Specifications of NTE2383
Current, Drain
10.5 A
Gate Charge, Total
58 nC
Package Type
TO-220
Polarization
P-Channel
Power Dissipation
75 W
Resistance, Drain To Source On
0.3 Ohm
Resistance, Thermal, Junction To Case
2.5 °C⁄W
Temperature, Operating, Maximum
+150 °C
Temperature, Operating, Minimum
-55 °C
Time, Turn-off Delay
140 ns
Time, Turn-on Delay
60 ns
Transconductance, Forward
2 mhos
Transistor Type
N Channel Enhancement Mode
Voltage, Breakdown, Drain To Source
100 V
Voltage, Forward, Diode
6.3 V
Voltage, Gate To Source
±20 V
.147 (3.75) Dia Max
.070 (1.78) Max
.100 (2.54)
Gate
.420 (10.67)
Max
.250 (6.35)
Max
Drain/Tab
Source
(12.7)
(12.7)
.110 (2.79)
.500
Max
.500
Min