NTE585 NTE Electronics, Inc., NTE585 Datasheet
NTE585
Manufacturer Part Number
NTE585
Description
Diode; DO-41; 1.0 A (Max.); 0.60 V (Max.); 25 A @ 70 degC; -65 degC; 125 degC;
Manufacturer
NTE Electronics, Inc.
Datasheet
1.NTE585.pdf
(1 pages)
Specifications of NTE585
Capacitance, Junction
110 pF
Configuration
Single-Phase
Current, Forward
1 A
Current, Reverse
10 mA
Current, Surge
25 A
Current, Surge, Non-repetitive Peak Forward
25 A @ 70°C
Junction Capacitance
110 pF (Typ.)
Package Type
DO-41
Primary Type
Schottky Barrier
Speed, Switching
Fast
Temperature, Junction, Maximum
+125 °C
Temperature, Junction, Minimum
-65 °C
Temperature, Operating
-65 to +125 °C
Thermal Resistance, Junction To Ambient
80°C⁄W (Typ.)
Voltage, Forward
0.6 V
Voltage, Reverse
40 V
Voltage, Rms, Maximum
28 V
Lead Free Status / Rohs Status
RoHS Compliant part
Features:
D Low Switching Noise
D Low Forward Voltage Drop
D High Current Capability
D High Reliability
D High Surge Capability
Maximum Ratings and Electrical Characteristics: (T
phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%.
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current (375” . (9.5mm) lead length at T
Peak Forward Surge Current
Maximum Forward Voltage at 1.0A DC
Maximum Forward Voltage at 3.1A DC
Maximum Average Reverse Current at Peak Reverse Voltage
Typical Thermal Resistance, Junction−to−Ambient (Note 1), R
Typical Junction Capacitance (Note 2)
Operating Junction Temperature Range T
Storage Temperature Range T
Note 1. Thermal Resistance Junction to Ambient Vertical PC Board Mounting, 0.5” (12.7mm) Lead
Note 2. Measured at 1MHz and applied reverse voltage of 4.0 Volts.
(8.3ms single half sine−wave superimposed on rated load T
T
T
A
A
Length.
= +25°C
= +100°C
.034 (0.87) Dia Max
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Schottky Barrier, Fast Switching
(27.94)
1.100
STG
Min
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Silicon Rectifier Diode
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Color Band Denotes Cathode
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
J
NTE585
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
(5.33)
.210
Max
A
= +25°C unless otherwise specified. Single
thJA
L
. . . . . . . . . . . . . . . . . . . . .
= +70°C)
.107 (2.72)
Dia Max
L
. . . . . . . . . . . . . .
= +90°C).
−65° to +125°C
−65° to +125°C
. .
80°C/W
1.0mA
110pF
10mA
1.0A
.60V
.90V
40V
28V
40V
25A
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