NTE2322 NTE Electronics, Inc., NTE2322 Datasheet
NTE2322
Manufacturer Part Number
NTE2322
Description
Transistor, Bipolar; TO-2018; T-NPN; 40V; 60V; 5V; 600mA; 1.9W; -55 to 125degC; 66degC/W
Manufacturer
NTE Electronics, Inc.
Type
General Purpose, Quadr
Datasheet
1.NTE2322.pdf
(2 pages)
Specifications of NTE2322
Current, Collector
600 mA
Current, Gain
30
Device Dissipation
1.9 W
Frequency
200 MHz
Gain, Dc Current, Minimum
30
Package Type
14-Lead DIP
Polarity
PNP
Power Dissipation
1.9 W
Primary Type
Si
Temperature Range, Junction, Operating
-55 to 125 °C
Thermal Resistance, Junction To Ambient
66 °C⁄W
Transistor Polarity
PNP
Voltage, Breakdown, Collector To Base
60 V (Min.)
Voltage, Breakdown, Collector To Emitter
40 V
Voltage, Breakdown, Emitter To Base
5 V (Min.)
Voltage, Collector To Base
60 V
Voltage, Collector To Emitter
40 VDC
Voltage, Collector To Emitter, Saturation
1.6 V
Voltage, Emitter To Base
5 V
Voltage, Saturation, Collector To Emitter
1.6 V (Max.)
Absolute Maximum Ratings:
Collector–Emitter Voltage, V
Collector–Base Voltage, V
Emitter–Base Voltage, V
Continuous Collector Current, I
Total Device Dissipation (T
Total Device Dissipation (T
Operating Junction Temperature Range, T
Storage Temperature Range, T
Thermal Reistance, Junction–to–Ambient, R
Electrical Characteristics: (T
Note 1. Pulse test: Pulse Width
OFF Characteristics
Collector–Emitter Breakdown Voltage
Collector–Base Breakdown Voltage
Emitter–Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
ON Characteristics (Note 1)
DC Current Gain
Collector–Emitter Saturation Voltage
Base–Emitter Saturation Voltage
Derate Above 25 C
Derate Above 25 C
Parameter
EBO
CBO
A
A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CEO
= +25 C, Each Transistor), P
= +25 C, Total Device), P
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
stg
C
A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Quad, General Purpose
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= +25 C unless otherwise specified)
Silicon PNP Transistor
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
300 s, Duty Cycle
V
V
V
Symbol
V
V
(BR)CEO
(BR)CBO
(BR)EBO
I
I
CE(sat)
BE(sat)
h
CBO
EBO
FE
J
NTE2322
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
thJA
I
I
I
V
V
V
V
V
I
I
I
I
C
C
E
C
C
C
C
CB
EB
CE
CE
CE
= 10 A, I
= 10mA, I
= 10 A, I
= 150mA, I
= 300mA, I
= 150mA, I
= 300mA, I
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= 3V, I
= 30V, I
= 10V, I
= 10V, I
= 10V, I
Test Conditions
D
E
C
E
B
E
C
C
C
= 0
2%.
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= 0
= 0
B
B
B
B
= 0, Note 1
= 0
D
= 10mA
= 150mA
= 300mA
= 15mA
= 30mA
= 15mA
= 30mA
. . . . . . . . . . . . . . . . . . . . . . . . . . . .
Min
100
40
60
75
30
5
–
–
–
–
–
–
Typ
–55 to +125 C
–55 to +125 C
–
–
–
–
–
–
–
–
–
–
–
–
Max
0.4
1.6
1.5
2.6
6.5mW/ C
50
50
19mW/ C
–
–
–
–
–
–
66 C/W
600mA
0.65W
Unit
1.9W
nA
nA
V
V
V
V
V
V
V
40V
60V
5V
Related parts for NTE2322
Image
Part Number
Description
Manufacturer
Datasheet
Request
R
Part Number:
Description:
nte quick cross for windows, cd, version 15
Manufacturer:
NTE Electronics, Inc.
Part Number:
Description:
NTE829, Integrated Circuit Electronics Attenuator, 90dB @ 1kHz
Manufacturer:
NTE Electronics, Inc.
Datasheet:
Part Number:
Description:
DIODE, SMALL SIGNAL; 200 MA @ +25C IF; 100 V (MIN.) @ 100 UA, +25C; DO-35
Manufacturer:
NTE Electronics, Inc.
Datasheet:
Part Number:
Description:
DIODE, SMALL SIGNAL; 200 MA @ +25C IF; 100 V (MIN.) @ 100 UA, +25C; DO-35
Manufacturer:
NTE Electronics, Inc.
Part Number:
Description:
Transistor; NPN; 100 V (Max.); 100 V (Max.); 5 V (Max.); 15 A (Max.); 40 @ 4 V
Manufacturer:
NTE Electronics, Inc.
Datasheet:
Part Number:
Description:
Diode, Zener, 00.0V, 1W, DO-41; Voltage, Zener; Zener Impedance, Maximum
Manufacturer:
NTE Electronics, Inc.
Part Number:
Description:
TRANSISTOR, PNP, GENERAL PURPOSE, PKG STYLE TO-92
Manufacturer:
NTE Electronics, Inc.
Part Number:
Description:
CIRCUIT; TO-220; 40V; 0.01 %/V (TYP.) LINE REGULATION; 18 MV%/VO (TYP.)
Manufacturer:
NTE Electronics, Inc.
Part Number:
Description:
Relay; SSR; Power; SPST-NO; Cur-Rtg 40A; Ctrl-V 3.5-32DC; Vol-Rtg 0-100DC; Pnl-Mnt
Manufacturer:
NTE Electronics, Inc.
Datasheet:
Part Number:
Description:
Diode, Zener; 12 V @ 21 mA; 1 W @ +50C; DO-41; 700 Ohms @ 0.25 mA; +200; -65
Manufacturer:
NTE Electronics, Inc.
Part Number:
Description:
TRANSISTOR, N-CHANNEL; N-CHANNEL; 1.2 OHMS (TYP.); 60V; +/- 20V; 115MA DRAIN
Manufacturer:
NTE Electronics, Inc.
Part Number:
Description:
Relay; SSR; Power; SPST-NO; Cur-Rtg 40A; Ctrl-V 3-32DC; Vol-Rtg 80-530AC; Pnl-Mnt
Manufacturer:
NTE Electronics, Inc.
Datasheet:
Part Number:
Description:
Specifications: Manufacturer: NTE ; RoHS: Details
Manufacturer:
NTE Electronics, Inc.
Datasheet:
Part Number:
Description:
Rectifier, Bridge; Silicon Bridge Rectifier; 200 V; 400 A; 25; Thru Hole Mount
Manufacturer:
NTE Electronics, Inc.
Datasheet:
NTE2322 Summary of contents
Page 1
... Collector–Emitter Saturation Voltage Base–Emitter Saturation Voltage Note 1. Pulse test: Pulse Width NTE2322 Silicon PNP Transistor Quad, General Purpose . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...
Page 2
Electrical Characteristics (Cont’d): (T Parameter Small–Signal Characteristics Current Gain–Bandwidth Product Output Capacitance Input Capacitance 14 1 .785 (19.95) Max .100 (2.45) .600 (15.24) = +25 C unless otherwise specified) A Symbol Test Conditions 20V 50mA, ...