NTE123 NTE Electronics, Inc., NTE123 Datasheet
NTE123
Manufacturer Part Number
NTE123
Description
Transistor; TO39; NPN; 40 V; 75 V; 6 V; 800 mA; 800 mW; -65 to 200 degC
Manufacturer
NTE Electronics, Inc.
Type
Audio Amplifier, Switchr
Datasheet
1.NTE123.pdf
(3 pages)
Specifications of NTE123
Current, Collector
800 mA
Current, Collector Cutoff
10 μA
Current, Continuous Collector
800 mA
Current, Gain
40
Device Dissipation
800 mW
Frequency
300 MHz
Gain, Dc Current, Minimum
40 @ 500 mA
Package Type
TO-39
Polarity
NPN
Power Dissipation
800 mW
Primary Type
Si
Temperature Range, Junction, Operating
-65 to +200 °C
Transistor Polarity
NPN
Voltage, Breakdown, Collector To Base
75 V
Voltage, Breakdown, Collector To Emitter
40 V
Voltage, Breakdown, Emitter To Base
6 V
Voltage, Collector To Base
75 V
Voltage, Collector To Emitter
40 V
Voltage, Collector To Emitter, Saturation
1 V
Voltage, Emitter To Base
6 V
Lead Free Status / Rohs Status
RoHS Compliant part
Absolute Maximum Ratings:
Collector–Emitter Voltage, V
Collector–Base Voltage, V
Emitter–Base Voltage, V
Continuous Collector Current, I
Total Device Dissipation (T
Total Device Dissipation (T
Operating Junction Temperature Range, T
Storage Temperature Range, T
Electrical Characteristics: (T
OFF Characteristics
Collector–Emitter Breakdown Voltage V
Collector–Base Breakdown Voltage
Emitter–Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
Base Cuttoff Current
Derate Above 25 C
Derate Above 25 C
Parameter
General Purpose Audio Amplifier, Switch
EBO
CBO
A
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CEO
= +25 C), P
= +25 C), P
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
stg
C
A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= +25 C unless otherwise specified)
Silicon NPN Transistor
V
V
Symbol
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
(BR)CEO
(BR)CBO
(BR)EBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
I
I
I
CBO
EBO
CEX
I
BL
D
D
J
I
I
I
V
V
V
V
V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
C
C
E
NTE123
CE
CE
CE
EB
CE
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= 10 A, I
= 10mA, I
= 10 A, I
= 60V, I
= 60V, I
= 60V, V
= 3V, I
= 60V, V
Test Conditions
C
E
C
B
E
E
= 0
EB(off)
EB(off)
= 0
= 0
= 0
= 0
= 0, T
= 3V
= 3V
A
= +150 C
Min
40
75
6
–
–
–
–
–
Typ
–
–
–
–
–
–
–
–
–65 to +200 C
–65 to +200 C
Max
0.01
10
10
10
20
–
–
–
5.33mW/ C
20mW/ C
800mW
800mA
Unit
nA
nA
nA
3.0W
V
V
V
A
A
40V
75V
6V
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NTE123 Summary of contents
Page 1
... Emitter–Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current Base Cuttoff Current NTE123 Silicon NPN Transistor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . CEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...
Page 2
Electrical Characteristics (Cont’d): (T Parameter ON Characteristics (Note 1) DC Current Gain Collector–Emitter Saturation Voltage Base–Emitter Saturation Voltage Small–Signal Characteristics Current Gain–Bandwidth Product Output Capacitance Input Capacitance Input Impedance Voltage Feedback Ratio Small–Signal Current Gain Output Admittance Collector–Base Time Constant ...
Page 3
Max .500 (12.7) Min Emitter 45 .031 (.793) .370 (9.39) Dia Max .355 (9.03) Dia Max .018 (0.45) Base Collector/Case ...