NTE3041 NTE Electronics, Inc., NTE3041 Datasheet
NTE3041
Manufacturer Part Number
NTE3041
Description
Optoisolater; Analog; 6-Pin DIP; Transistor; 1.15 V@ 10 mA; 60 mA; 250 mW; 6
Manufacturer
NTE Electronics, Inc.
Type
Analogr
Datasheet
1.NTE3041.pdf
(3 pages)
Specifications of NTE3041
Capacitance
18 pF (Typ.)
Current, Forward
60 mA
Input Type
LED
Output Type
Transistor
Package Type
6-Pin DIP
Power Dissipation
250 mW @ 25 °C
Temperature, Operating, Maximum
+100 °C
Temperature, Operating, Minimum
-55 °C
Time, Turn-on
7.5 μs (Typ.) @ 10 V, 2 mA, 100 Ohms
Voltage, Collector To Emitter
30 V
Voltage, Forward
1.15 V (Typ.) @ 10 mA
Voltage, Isolation
7500 VAC (Min.) @ 60 Hz, 1 Sec.
Voltage, Reverse
6 V
Lead Free Status / Rohs Status
RoHS Compliant part
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
NTE3041
Manufacturer:
INFINEON
Quantity:
5 510
Description:
The NTE3041 is an optoisolator in a 6–Lead DIP type package consisting of a gallium arsenide in-
frared emitting diode optically coupled to a monolithic silicon phototransistor detector.
Features:
D High Current Transfer Ratio: 100% Min @ Spec Conditions
D Guaranteed Switching Speeds
Applications:
D General Purpose Switching Circuits
D Interfacing and Coupling Systems of Different Potentials and Impedances
D Regulation Feedback Circuits
D Monitor & Detection Circuits
D Solid State Relays
Absolute Maximum Ratings: (T
Input LED
Reverse Voltage, V
Continuous Forward Current, I
LED Power Dissipation (With Negligible Power in Output Detector), P
Output Transistor
Collector–Emitter Voltage, V
Emitter–Base Voltage, V
Collector–Base Voltage, V
Continuous Collector Current, I
Detector Power Dissipation (With Negligible Power in Output Detector), P
Total Device
Isolation Source Voltage (Peak AC Voltage, 60Hz, 1sec Duration, Note 1), V
Total Device Power Dissipation, P
Operating Ambient Temperature Range, T
Storage Temperature Range, T
Lead Temperature (During Soldering, 1/16” from case, 10sec), T
Note 1. Isolation Surge Voltage is an internal device dielectric breakdown rating. For this test, Pin1
Derate Above 25 C
Derate Above 25 C
Derate Above 25 C
and Pin2 are common, and Pin4, Pin5, and Pin6 are common.
R
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
EBO
CBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
F
stg
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NPN Transistor Output
A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
D
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= +25 C unless otherwise specified)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Optoisolator
A
NTE3041
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
L
. . . . . . . . . . . . . . . . . . . . .
D
. . . . . . . . . . . . . . . . .
D
. . . . . . . . . . . . .
ISO
. . . . . . . . . .
–55 to +100 C
–55 to +150 C
1.41mW/ C
1.76mW/ C
2.94mW/ C
120mW
150mW
250mW
+260 C
150mA
7500V
60mA
30V
70V
6V
7V
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NTE3041 Summary of contents
Page 1
... Description: The NTE3041 is an optoisolator in a 6–Lead DIP type package consisting of a gallium arsenide in- frared emitting diode optically coupled to a monolithic silicon phototransistor detector. Features: D High Current Transfer Ratio: 100% Min @ Spec Conditions D Guaranteed Switching Speeds Applications: D General Purpose Switching Circuits ...
Page 2
Electrical Characteristics: (T Parameter Input LED Forward Voltage Reverse Leakage Current Capacitance Output Transistor Collector–Emitter Dark Current Collector–Base Dark Current Collector–Emitter Breakdown Voltage Collector–Base Breakdown Voltage Emitter–Base Breakdown Voltage DC Current Gain Collector–Emitter Capacitance Collector–Base Capacitance Emitter–Base Capacitance Coupled Output ...
Page 3
Anode Cathode N. .070 (1.78) Max .350 (8.89) Max .200 (5.08) Max .085 (2.16) Max Pin Connection Diagram Base Collector 3 4 Emitter 5 4 .260 (6.6) Max 2 3 .350 (8.89) Max .100 ...