1N5225B-TR/BKN Vishay / Small Signal & Opto Products (SSP), 1N5225B-TR/BKN Datasheet - Page 3
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1N5225B-TR/BKN
Manufacturer Part Number
1N5225B-TR/BKN
Description
ZENER-DIODE 0.5W, 5%, DO-35, CUT TAPE
Manufacturer
Vishay / Small Signal & Opto Products (SSP)
Datasheet
1.1N5225B-TRBKN.pdf
(7 pages)
Specifications of 1N5225B-TR/BKN
Current, Forward
200 mA
Current, Reverse
20 mA
Current, Reverse Leakage
50 μA
Package Type
DO-35
Power Dissipation
500 mW
Primary Type
Zener
Temperature, Junction, Maximum
+175 °C
Voltage, Forward
1.1 V
Voltage, Reverse
3 V
Lead Free Status / Rohs Status
RoHS Compliant part
Electrostatic Device
1)
Typical Characteristics
T
Document Number 85588
Rev. 1.7, 23-Mar-07
amb
Figure 2. Typical Change of Working Voltage under Operating
Based on dc-measurement at thermal equilibrium; lead length = 9.5 (3/8 "); thermal resistance of heat sink = 30 K/W
Partnumber
1N5265B
1N5266B
1N5267B
= 25 °C, unless otherwise specified
Figure 1. Thermal Resistance vs. Lead Length
95 9598
1000
100
500
400
300
200
100
10
0
1
Nominal Zener
0
0
Conditions at T
T
at I
Voltage
j
= 25 °C
ZT
62
68
75
5
V
I - Lead Length (mm)
, V
5
1)
Z
V
Z
10
- Z-Voltage (V)
T
L
10
I
= constant
Z
amb
l
= 5 mA
Test Current
15
= 25 °C
mA
l
1.8
1.7
I
15
ZT
2
20
95 9611
25
20
Impedance
Maximum
Z
Dynamic
ZT
185
230
270
Ω
at I
ZT
1)
Z
Impedance
Maximum
ZK
Dynamic
0.25 mA
Figure 4. Total Power Dissipation vs. Ambient Temperature
1400
1600
1700
at I
Ω
ZK
Figure 3. Typical Change of Working Voltage vs.
95 9602
1N5221B to 1N5267B
=
95 9599
600
500
400
300
200
100
1.3
1.2
1.1
1.0
0.9
0.8
0
- 60
Temperature of
0
Coeffizient
α (%/K)
+ 0.097
+ 0.097
+ 0.098
T
Typical
V
at I
amb
Ztn
T
40
0
Junction Temperature
j
= V
- Junction Temperature (°C)
- Ambient Temperature (°C)
ZT
Zt
/V
Z
60
Vishay Semiconductors
80
TK
(25 °C)
VZ
= 10 x 10
120
120
Maximum Reverse Leakage
-4
/K
0.1
0.1
0.1
µA
I
180
- 2 x 10
- 4 x 10
R
160
8 x 10
2 x 10
6 x 10
4 x 10
0
-4
-4
-4
-4
-4
-4
Current
/K
/K
240
/K
/K
/K
/K
200
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V
47
52
56
V
R
3