SI2309DS-T1-E3 Siliconix / Vishay, SI2309DS-T1-E3 Datasheet
SI2309DS-T1-E3
Manufacturer Part Number
SI2309DS-T1-E3
Description
MOSFET, Power; P-Ch; VDSS -60V; RDS(ON) 0.275Ohm; ID -1.25A; TO-236 (SOT-23); PD 1.25W
Manufacturer
Siliconix / Vishay
Datasheet
1.SI2309DS-T1-E3.pdf
(2 pages)
Specifications of SI2309DS-T1-E3
Current, Drain
-1.25 A
Gate Charge, Total
5.4 nC
Package Type
TO-236 (SOT-23)
Polarization
P-Channel
Power Dissipation
1.25 W
Resistance, Drain To Source On
0.275 Ohm
Temperature, Operating, Maximum
+150 °C
Temperature, Operating, Minimum
-55 °C
Time, Turn-off Delay
15.5 ns
Time, Turn-on Delay
10.5 ns
Transconductance, Forward
1.9 S
Voltage, Breakdown, Drain To Source
-60 V
Voltage, Forward, Diode
-0.82 V
Voltage, Gate To Source
±20 V
Lead Free Status / Rohs Status
RoHS Compliant part
Electrostatic Device
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
SI2309DS-T1-E3
Manufacturer:
VISHAY
Quantity:
46 000
Part Number:
SI2309DS-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Notes:
a. Surface Mounted on FR4 Board.
b. t ≤ 5 s.
* Pb containing terminations are not RoHS compliant, exemptions may apply.
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Avalanche Current
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Lead
V
DS
- 60
(V)
0.550 at V
0.340 at V
r
DS(on)
a
J
a, b
= 150 °C)
GS
a
GS
(Ω)
= - 4.5 V
= - 10 V
P-Channel 60-V (D-S) MOSFET
a, b
Ordering Information: Si2309DS-T1
A
G
S
I
- 1.25
= 25 °C, unless otherwise noted
D
- 1
Steady State
Steady State
(A)
1
2
L = 0.1 mH
T
T
T
T
A
A
A
A
* Marking Code
Si2309DS (A9)*
t ≤ 5 s
= 25 °C
= 70 °C
= 25 °C
= 70 °C
(SOT-23)
Top View
TO-236
Si2309DS-T1-E3 (Lead (Pb)-free)
3
Symbol
Symbol
T
R
R
J
V
V
I
D
I
P
, T
thJA
DM
thJL
I
AS
GS
DS
D
D
stg
Typical
130
45
- 55 to 150
- 1.25
- 0.85
Limit
± 20
1.25
- 60
0.8
- 8
- 5
Maximum
100
166
60
Vishay Siliconix
Si2309DS
°C/W
Unit
Unit
°C
W
RoHS*
V
A
COMPLIANT
Available
Pb-free
1
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SI2309DS-T1-E3 Summary of contents
Page 1
... Maximum Junction-to-Ambient a Maximum Junction-to-Lead Notes: a. Surface Mounted on FR4 Board ≤ containing terminations are not RoHS compliant, exemptions may apply TO-236 (SOT-23 Top View Si2309DS (A9)* * Marking Code Ordering Information: Si2309DS-T1 Si2309DS-T1-E3 (Lead (Pb)-free °C, unless otherwise noted A Symbol ° ° 0 °C A ...
Page 2
... Si2309DS Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time ...