BPW21R Vishay / Small Signal & Opto Products (SSP), BPW21R Datasheet - Page 2

• Manufacturer Part Number: BPW21R
• Description: Photodiode, Silicon Pin; TO-5; 9 muA (Typ.); 450 mV (Typ.); 2 nA (Typ.); -55 de
• Manufacturer: Vishay / Small Signal & Opto Products (SSP)

Specifications of BPW21R

• Active Area: 7.5 sq.mm
• Angle, Response: ±50 °
• Capacitance, Junction: 1.2 nF
• Current, Dark: 2 nA
• Current, Dark, Reverse: 2 nA (Typ.)
• Current, Short Circuit: 9 μA
• Diameter, Lead: 0.45 mm
• Length, Lead: 14.1 mm
• Package Type: TO-5
• Primary Type: Photo
• Resistance, Shunt: 38
• Sensitivity Spectral Range: 420 to 675 nm
• Spectral Application Range: 420 to 675
• Temperature Coefficient: -0.05 %⁄K (Typ.)
• Temperature, Operating: -40 to +125 °C
• Temperature, Operating, Maximum: 125 °C
• Temperature, Operating, Minimum: -55 °C
• Time, Fall: 3 μs
• Time, Rise: 3.1 μs
• Voltage, Breakdown: 10 V
• Voltage, Breakdown, Reverse: 10 V (Min.)
• Voltage, Open Circuit: 450 mV
• Lead Free Status / Rohs Status: RoHS Compliant part Electrostatic Device

Note
T
BASIC CHARACTERISTICS
T
amb
amb
BASIC CHARACTERISTICS
PARAMETER
Forward voltage
Breakdown voltage
Reverse dark current
Diode capacitance
Dark resistance
Open circuit voltage
Temperature coefficient of V
Short circuit current
Temperature coefficient of I
Reverse light current
Sensitivity
Angle of half sensitivity
Wavelength of peak sensitivity
Range of spectral bandwidth
Rise time
Fall time
= 25 °C, unless otherwise specified
Fig. 1 - Reverse Dark Current vs. Ambient Temperature
= 25 °C, unless otherwise specified
94 8468
10
10
10
10
10
4
3
2
1
20
T
amb
40
- Ambient Temperature (°C)
K
o
60
80
Silicon Photodiode, RoHS Compliant
V
V
R
R
V
100
V
V
V
= 0 V, R
= 0 V, R
R
R
R
R
= 5 V, E
= 5 V
E
= 0 V, f = 1 MHz, E = 0
= 5 V, f = 1 MHz, E = 0
TEST CONDITION
I
A
R
V
120
= 1 klx, V
R
= 20 µA, E = 0
V
I
E
E
E
E
F
L
L
R
= 5 V, E = 0
A
A
A
A
= 50 mA
= 1 kΩ, λ = 660 nm
= 1 kΩ, λ = 660 nm
= 10 mV
A
= 1 klx
= 1 klx
= 1 klx
= 1 klx
= 10
R
-2
= 5 V
to 10
5
lx
Fig. 2 - Relative Reverse Light Current vs. Ambient Temperature
SYMBOL
V
TK
TK
λ
C
C
R
V
V
I
I
λ
(BR)
I
S
ϕ
0.5
t
t
ro
ra
k
p
r
f
F
D
D
D
o
Vo
Ik
94 8738
1.3
1.2
1.1
1.0
0.9
0.8
0
MIN.
280
4.5
4.5
10
20
T
amb
Vishay Semiconductors
40
- Ambient Temperature
420 to 675
- 0.05
TYP.
± 50
400
450
565
1.0
1.2
3.1
3.0
- 2
38
2
9
9
9
60
80
MAX.
100
1.3
30
BPW21R
120
UNIT
mV/K
nA/Ix
%/K
deg
GΩ
mV
nm
nm
nA
nF
pF
µA
µA
µs
µs
V
V
379