1N5399-E3/51 General Semiconductor / Vishay, 1N5399-E3/51 Datasheet - Page 3

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1N5399-E3/51

Manufacturer Part Number
1N5399-E3/51
Description
Rectifier; 1.5 A (Max.) IFAV@Tcase; 50A Ifrm; 1000V VRSM; 1.5A IFRM
Manufacturer
General Semiconductor / Vishay
Datasheet

Specifications of 1N5399-E3/51

Capacitance, Junction
15 pF
Current Squared Time Rating
3.7
Current, Forward
1.5 A
Current, Reverse
300 μA
Current, Surge
50 A
Package Type
DO-204AL (DO-41)
Primary Type
Rectifier
Speed, Switching
Standard
Temperature, Junction, Maximum
+150 °C
Temperature, Operating
-50 to +150 °C
Time, Recovery
2 μs
Voltage, Forward
1.4 V
Voltage, Reverse
1000 V
Lead Free Status / Rohs Status
RoHS Compliant part Electrostatic Device
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
Figure 3. Typical Instantaneous Forward Characteristics
1000
0.01
100
0.01
100
0.1
10
0.1
10
1
1
0.6
0
Figure 4. Typical Reverse Characteristics
Percent of Rated Peak Reverse Voltage (%)
0.8
Instantaneous Forward Voltage (V)
20
1.0
T
T
J
J
40
= 150 °C
= 25 °C
1.2
T
Pulse Width = 300 µs
1 % Duty Cycle
60
J
= 25 °C
1.4
80
1.6
1.8
100
0.107 (2.7)
0.080 (2.0)
0.034 (0.86)
0.028 (0.71)
DIA.
DIA.
DO-204AL (DO-41)
0.205 (5.2)
0.160 (4.1)
1.0 (25.4)
1.0 (25.4)
MIN.
MIN.
100
100
0.1
10
10
1
1
0.01
0.1
Vishay General Semiconductor
Figure 6. Transient Thermal Impedance
Figure 5. Typical Junction Capacitance
0.1
Reverse Voltage (V)
1N5391 thru 1N5399
t - Pulse Duration (s)
1
1
10
T
f = 1.0 MHz
V
J
sig
= 25 °C
10
= 50 mVp-p
100
100
3

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