NTE53 NTE Electronics, Inc., NTE53 Datasheet - Page 2

• Manufacturer Part Number: NTE53
• Description: Transistor; NPN; 400 V; 9 V; 15 A; 10 A; 175 W; 1 degC/W; 300 V (Min.); 6; 30
• Manufacturer: NTE Electronics, Inc.
• Type: Driver, High Voltage, Switchr

Specifications of NTE53

• Complement To: PNP
• Current, Base: 10 A
• Current, Collector: 15 A
• Current, Collector Cutoff: 1 mA
• Current, Gain: 60
• Device Dissipation: 175 W
• Frequency: 28 MHz
• Gain, Dc Current, Maximum: 30
• Gain, Dc Current, Minimum: 6
• Material Type: Silicon
• Package Type: TO-3
• Polarity: NPN
• Power Dissipation: 175 W
• Primary Type: Si
• Resistance, Thermal, Junction To Case: 1 °C/W
• Temperature, Operating, Maximum: +200 °C
• Temperature, Operating, Minimum: -65 °C
• Transistor Polarity: NPN
• Transistor Type: NPN
• Voltage, Breakdown, Collector To Emitter: 400 V
• Voltage, Collector To Base: 850
• Voltage, Collector To Emitter: 400 V
• Voltage, Collector To Emitter, Saturation: 5 V
• Voltage, Emitter To Base: 9 V
• Voltage, Saturation, Collector To Emitter: 5 V
• Voltage, Sustaining, Collector To Emitter: 300 V
• Lead Free Status / Rohs Status: RoHS Compliant part

Electrical Charactetristics: (T
Note 2. Pulse test: Pulse Width = 300 s, Duty Cycle
OFF Characteristics (Note 2)
Collector-Emitter Sustaining Voltage
Collector Cutoff Current
Emitter Cutoff Current
Second Breakdown
Second Breakdown Collector
ON Characteristics (Note 2)
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Dynamic Characteristics
Current Gain-Bandwidth Product
Output Capacitance
Switching Characteristics (Resistive Load)
Delay Time
Rise Time
Storage Time
Fall Time
Switching Characteristics (Inductive Load, Clamped)
Storage Time
Fall Time
Storage Time
Fall Time
Current with Base Forward Bias
Parameter
V
V
Symbol
C
V
V
CEX(sus)
CEO(sus)
CE(sat)
I
I
BE(sat)
I
h
C
I
= +25 C unless otherwise specified)
CEV
CER
EBO
t
t
S/b
f
t
t
t
t
FE
t
t
sv
sv
T
ob
d
s
fi
fi
r
f
I
I
I
V
V
T
V
V
V
V
V
I
I
I
I
I
V
V
V
t
I
V
I
V
C
C
C
C
C
C
C
C
p
C
C
CEV
CEV
C
CE
EB
CE
CE
CE
CE
CB
CC
BE(off)
BE(off)
= 300 s, Duty Cycle
= 100mA, I
= 8A, V
= 15A, V
= 10A, I
= 10A, I
= 15A, I
= 10A, I
= 10A, I
= 10A peak, V
= 10A peak, V
= +100 C
= 9V, I
= 850V, R
= 100V, t = 1.0s (non-repetitive)
= 2V, I
= 2V, I
= 10V, I
= 10V, I
= 250V, I
= 850V, V
= 850V, V
= 5V
= 5V, T
clamp
B
B
B
B
B
C
C
C
clamp
Test Conditions
= 2A
= 2A, T
= 3A
= 2A
= 2A, T
C
E
= 0
= 5A
= 10A
B
C
= 0, f = 1MHz
= 500mA, f = 1MHz
BE
J
= 0
= 450V, T
BE(off)
BE(off)
= 10A, I
= +100 C
= 300V, T
clamp
clamp
= 50 , T
2%.
C
C
= 1.5V
= 1.5V,
= +100 C
= +100 C
= 450V, I
= 450V, I
B1
C
2%
C
= I
C
= +100 C
= +100 C
= +100 C
B2
B1
B1
=2A,
= 2A,
= 2A,
0.09
Min
400
450
300
125
0.2
12
6
6
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ
2.0
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Max
0.05
500
1.0
4.0
5.0
1.0
1.5
2.5
5.0
1.6
1.6
1.0
4.0
5.0
1.5
0.7
60
30
28
-
-
-
-
-
-
MHz
Unit
mA
mA
mA
mA
pF
V
V
V
A
V
V
V
V
V
s
s
s
s
s
s
s
s