EE-SPY412 Omron Automation, EE-SPY412 Datasheet - Page 2

• Manufacturer Part Number: EE-SPY412
• Description: Sensor; Light-ON; Diffuse Mode Sensing Mode; Photomicro; 2 to 5 mm; Infrared
• Manufacturer: Omron Automation
• Type: Diffuser

Specifications of EE-SPY412

• Current, Switching: 80 mA
• Dimensions: 26 mm L x 22.8 mm H x 8 mm W
• Function: Proximity
• Indicator: Modulated Light
• Ip Rating: IP50
• Light Source: Infrared
• Mounting Type: Flat Surface
• Output: NPN
• Primary Type: Photoelectric
• Range, Measurement: 5 mm
• Sensing Mode: Convergent Reflective
• Technology: Photoelectric
• Termination: Connector
• Voltage, Supply: 24 VDC
• Voltage, Switching: 24 VDC
• Voltage Range: 5-24 VDC
• Load Rating: 80 mA (NPN), 10 mA (TTL) Switching Capacity
• Enclosure Rating: IP50
• Lead Free Status / Rohs Status: RoHS Compliant part

Ratings and Specifications
I/O Circuit Diagrams
NPN Output
Item
Sensing distance
Minimum sensing object
Distance to background *1
Differential distance
Light source
Indicator *2
Supply voltage
Current consumption
Control output
Response frequency *3
Ambient illumination
Ambient temperature range
Ambient humidity range
Vibration resistance
Shock resistance
Enclosure rating
Connecting method
Weight
Material
EE-SPY411
EE-SPY412
EE-SPY311
EE-SPY312
Model
Case
Holder
Models
configuration
Light-ON
Dark-ON
Output
2 to 5 mm (Reflection factor: 90%; white paper 15
Pure copper wire (0.05 mm dia.)
20 mm max. (glass with aluminum deposition)
0.2 mm (with a sensing distance of 3 mm, horizontally)
GaAs infrared LED with a peak wavelength of 940 nm
Light indicator (red)
5 to 24 VDC ±10%, ripple (p-p): 5% max.
Average: 15 mA max., Peak: 50 mA max.
NPN voltage output:
80 mA load current with a residual voltage of 1.0 V max.
10 mA load current with a residual voltage of 0.4 V max.
100 Hz min.
3,000 lx max. with incandescent light or sunlight on the surface of the
receiver
Operating: 10 to +55 C
Storage:
Operating: 5% to 85%
Storage:
Destruction: 10 to 50 Hz, 1.5-mm double amplitude for 2 h each in X,
Destruction: 500m/s
IEC IP50
Special connector (soldering not possible)
Approx. 2.6 g
Polycarbonate
Polybutylene phthalate (PBT)
Load power supply voltage: 5 to 24 VDC
Load current: 80 mA max.
EE-SPY311, EE-SPY411, EE-SPY312, EE-SPY412
5% to 95%
25 to +65 C
Y, and Z directions
Light indicator
(red)
Output
transistor
Load 1
(relay)
Load 2
Light indicator
(red)
Output
transistor
Load 1
(relay)
Load 2
2
for 3 times each in X, Y, and Z directions
Timing charts
Interrupted
Interrupted
Releases
Releases
Operates
Operates
Incident
Incident
OFF
OFF
OFF
OFF
ON
ON
ON
ON
H
H
L
L
15 mm)
* Voltage output (when the sensor is connected to a transistor circuit)
Light indicator
(red)
circuit
Main
*1.
*2. The indicator is a GaP red LED
*3. The response frequency was measured by
(peak wavelength: 700 nm).
detecting the following rotating disk.
15 mm
1.5 to 3 mA
Disk
200 mm
Output circuit
EE-SPY311/411
dia.
Sensing object
Distance to background
OUT
EE-SPY31/41
20 mm
15 mm
lc
15 mm
Load 2
Load 1
∗
Background object
(glass with aluminum
deposition)
EE-SPY312/412
5 to 24VDC
Disk
2