LTC4267IGN-3#PBF Linear Technology, LTC4267IGN-3#PBF Datasheet - Page 17
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LTC4267IGN-3#PBF
Manufacturer Part Number
LTC4267IGN-3#PBF
Description
IC POE 802.3AF W/REG 16-SSOP
Manufacturer
Linear Technology
Datasheet
1.LTC4267CGN-3PBF.pdf
(32 pages)
Specifications of LTC4267IGN-3#PBF
Controller Type
Power over Ethernet Controller (POE)
Interface
IEEE 802.3af
Current - Supply
3mA
Operating Temperature
-40°C ~ 85°C
Mounting Type
Surface Mount
Package / Case
16-SSOP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Voltage - Supply
-
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
APPLICATIO S I FOR ATIO
Diode Bridge
IEEE 802.3af allows power wiring in either of two confi gu-
rations: on the TX/RX wires or via the spare wire pairs in
the RJ45 connector. The PD is required to accept power in
either polarity on either the main or spare inputs; therefore
it is common to install diode bridges on both inputs in
order to accommodate the different wiring confi gurations.
Figure 9 demonstrates an implementation of these diode
bridges. The IEEE 802.3af specifi cation also mandates
that the leakage back through the unused bridge be less
than 28µA when the PD is powered with 57V.
The IEEE standard includes an AC impedance requirement
in order to implement the AC disconnect function. Capaci-
tor C14 in Figure 9 is used to meet this AC impedance
requirement. A 0.1µF capacitor is recommended for this
application.
The LTC4267-3 has several different modes of operation
based on the voltage present between V
pins. The forward voltage drop of the input diodes in
a PD design subtracts from the input voltage and will
U
RJ45
1
2
3
6
4
5
7
8
TX
TX
RX
RX
Figure 9. PD Front End with Isolation Transformer, Diode Bridges and Capacitor
U
+
–
+
–
SPARE
SPARE
+
–
PULSE H2019
16
15
14
11
10
W
9
T1
PORTN
1
2
3
6
7
8
BR2
HD01
and V
TO PHY
U
PORTP
C14
0.1µF
100V
affect the transition point between modes. When using
the LTC4267-3, it is necessary to pay close attention to
this forward voltage drop. Selection of oversized diodes
will help keep the PD thresholds from exceeding IEEE
specifi cations.
The input diode bridge of a PD can consume over 4%
of the available power in some applications. It may be
desirable to use Schottky diodes in order to reduce power
loss. However, if the standard diode bridge is replaced
with a Schottky bridge, the transition points between the
modes will be affected. Figure 10 shows a technique for
using Schottky diodes while maintaining proper threshold
points to meet IEEE 802.3af compliance. D13 is added to
compensate for the change in UVLO turn-on voltage caused
by the Schottky diodes and consumes little power.
Classifi cation Resistor Selection (R
The IEEE specifi cation allows classifying PDs into four
distinct classes with class 4 being reserved for future use
(Table 2). An external resistor connected from R
V
PORTN
SMAJ58A
BR1
HD01
TVS
D3
(Figure 4) sets the value of the load current. The
V
PORTN
LTC4267-3
V
PORTP
42673 F09
LTC4267-3
CLASS
)
CLASS
17
42673f
to