LTC1955EUH Linear Technology, LTC1955EUH Datasheet - Page 14

IC INTERFACE DL SMART CARD 32QFN

LTC1955EUH

Manufacturer Part Number
LTC1955EUH
Description
IC INTERFACE DL SMART CARD 32QFN
Manufacturer
Linear Technology
Datasheet

Specifications of LTC1955EUH

Controller Type
Smart Card Interface
Interface
4-Wire Serial
Voltage - Supply
1.7 V ~ 5.5 V
Current - Supply
10µA
Operating Temperature
-40°C ~ 85°C
Mounting Type
Surface Mount
Package / Case
32-QFN
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant

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APPLICATIONS INFORMATION
LTC1955
10kV ESD Protection
All smart card pins (CLK A/CLK B, RST A/RST B, I/O A/I/O B,
C4A, C8A and V
human body model ESD in-situ. In order to ensure proper
ESD protection, careful board layout is required. The
PGND and SGND pins should be tied directly to a ground
plane. The V
close to the V
ground plane.
Capacitor Selection
Warning: A polarized capacitor such as tantalum or alumi-
num should never be used for the fl ying capacitor since
its voltage can reverse upon start-up of the LTC1955.
Low ESR ceramic capacitors should always be used for
the fl ying capacitor.
A total of six capacitors are required to operate the LTC1955.
An input bypass capacitor is required at PV
and DV
of the smart card V
capacitor is required from C
capacitor is required on the charge pump out pin CPO.
To prevent excessive noise spikes due to charge pump
operation, low ESR (equivalent series resistance) multi-
layer ceramic capacitors are strongly recommended.
There are several types of ceramic capacitors available, each
having considerably different characteristics. For example,
X7R/X5R ceramic capacitors have excellent voltage and
temperature stability but relatively low packing density.
Y5V ceramic capacitors have apparently higher packing
density but poor performance over their rated voltage or
temperature ranges. Under certain voltage and temperature
conditions, Y5V and X7R/X5R ceramic capacitors can be
compared directly by case size rather than specifi ed value
for a desired minimum capacitance.
Placement of the capacitors is critical for correct operation
of the LTC1955. Because the charge pump generates large
current steps, all of the capacitors should be placed as close
to the LTC1955 as possible. The low impedance nature of
multilayer ceramic chip capacitors will minimize voltage
spikes but only if the power path is kept very short (i.e.,
minimum inductance). The PV
14
CC
. Output bypass capacitors are required on each
CCA
CCA
/V
CCA
/V
CCB
CCB
CCA
/V
capacitors should be located very
CCB
/V
pins and tied immediately to the
CCB
) can withstand over 10kV of
+
pins. A charge pump fl ying
to C
BATT
/SV
and a charge storage
BATT
nodes should
BATT
, SV
BATT
be especially well bypassed. The capacitor for this node
should be directly adjacent to the QFN package. The CPO
and fl ying capacitors should be very close as well. The
LTC1955 can tolerate more distance between the LDO
capacitors and the V
Figure 3 shows an example of a tight printed circuit
board using single-layer copper. For best performance, a
multilayer board can be used and should employ a solid
ground plane on at least one layer.
The following capacitors are recommended for use with
the LTC1955.
C
CPO
C
V
CDV
IN
FLY
CCA/B
CC
Figure 3. Optimum Single-Layer PCB Layout
V
TYPE
CCA
X5R
X5R
X5R
VALUE
4.7μF
0.1μF
GND
1μF
CCA/B
CASE SIZE MURATA P/N
pins.
0805
0603
0402
V
BATT
GRM40-034 X5R 475K 6.3
GRM39 X5R 105K 6.3
GRM36 X5R 104K 10
V
CCB
1955 F03
1955fb

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