MC8640DTVU1067NE Freescale Semiconductor, MC8640DTVU1067NE Datasheet - Page 20
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MC8640DTVU1067NE
Manufacturer Part Number
MC8640DTVU1067NE
Description
IC MPU DUAL CORE E600 1023FCCBGA
Manufacturer
Freescale Semiconductor
Datasheet
1.MC8640HX1067NE.pdf
(130 pages)
Specifications of MC8640DTVU1067NE
Processor Type
MPC86xx PowerPC 32-Bit
Speed
1.067GHz
Voltage
0.95V
Mounting Type
Surface Mount
Package / Case
1023-FCCBGA
Family Name
MC8xxx
Device Core
PowerQUICC
Device Core Size
32b
Frequency (max)
1.067GHz
Instruction Set Architecture
RISC
Supply Voltage 1 (typ)
0.95/1.05V
Operating Supply Voltage (max)
1/1.1V
Operating Supply Voltage (min)
0.9/1V
Operating Temp Range
-40C to 105C
Operating Temperature Classification
Industrial
Mounting
Surface Mount
Package Type
CBGA
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Features
-
Lead Free Status / Rohs Status
Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MC8640DTVU1067NE
Manufacturer:
FREESCALE
Quantity:
1 450
Company:
Part Number:
MC8640DTVU1067NE
Manufacturer:
Freescale Semiconductor
Quantity:
10 000
DDR and DDR2 SDRAM
Table 15
Dn_GV
Table 16
Table 17
20
I/O supply voltage
I/O reference voltage
I/O termination voltage
Input high voltage
Input low voltage
Output leakage current
Output high current (V
Output low current (V
Notes:
1. D n _GV
2. MV
3. V
4. Output leakage is measured with all outputs disabled, 0 V
Current draw for MV
1. The voltage regulator for MV
Input/output capacitance: DQ, DQS
Delta input/output capacitance: DQ, DQS
Note:
1. This parameter is sampled. D n _GV
Peak-to-peak noise on D n _MV
equal to D n _MV
V
TT
OUT
REF
is not applied directly to the device. It is the supply to which far end signal termination is made and is expected to be
DD
(peak-to-peak) = 0.2 V.
DD
is expected to be equal to 0.5 × D n _GV
provides the recommended operating conditions for the DDR SDRAM component(s) when
provides the DDR capacitance when Dn_GV
provides the current draw characteristics for MV
(typ) = 2.5 V
is expected to be within 50 mV of the DRAM D n _GV
Table 15. DDR SDRAM DC Electrical Characteristics for D n _GV
Parameter
MPC8640 and MPC8640D Integrated Host Processor Hardware Specifications, Rev. 3
Parameter
REF
REF
OUT
OUT
Parameter
. This rail should track variations in the DC level of D n _MV
= 0.35 V)
Table 16. DDR SDRAM Capacitance for D n _GV
= 1.95 V)
.
REF
Table 17. Current Draw Characteristics for MV
REF
must be able to supply up to 500 μA current.
may not exceed ±2% of the DC value.
DD
= 2.5 V ± 0.125 V, f = 1 MHz, T
D n _MV
D n _GV
Symbol
DD
V
V
I
V
I
I
, and to track D n _GV
OH
OZ
OL
TT
IH
IL
REF
Symbol
DD
I
MVREF
Symbol
≤
C
C
D n _MV
D n _MV
V
DIO
0.49 × D n _GV
IO
OUT
DD
DD
at all times.
≤
(typ) = 2.5 V.
2.375
–16.2
REF
–0.3
16.2
Min
–50
REF
REF
D n _GV
A
DD
.
– 0.04
+ 0.15
= 25°C, V
DC variations as measured at the receiver.
Min
—
Min
DD
DD
—
6
REF
.
DD
.
D n _MV
D n _MV
OUT
0.51 × D n _GV
(typ) = 2.5 V
D n _GV
REF
= D n _GVDD/2,
Max
500
2.625
Max
DD
REF
REF
50
—
—
DD
Max
0.5
8
(typ) = 2.5 V
+ 0.04
+ 0.3
– 0.15
DD
Freescale Semiconductor
Unit
μA
Unit
Unit
pF
pF
mA
mA
μA
V
V
V
V
V
Note
Notes
Notes
1
—
—
—
—
1
1
1
2
3
4