MC68SEC000AA16 Freescale Semiconductor, MC68SEC000AA16 Datasheet - Page 54
![IC MPU 32BIT 16MHZ 64-QFP](/photos/6/76/67671/mc68sec000aa16_sml.jpg)
MC68SEC000AA16
Manufacturer Part Number
MC68SEC000AA16
Description
IC MPU 32BIT 16MHZ 64-QFP
Manufacturer
Freescale Semiconductor
Series
M68000r
Specifications of MC68SEC000AA16
Processor Type
M680x0 32-Bit
Speed
16MHz
Voltage
3.3V, 5V
Mounting Type
Surface Mount
Package / Case
64-QFP
Processor Series
M680xx
Core
CPU32
Maximum Clock Frequency
16 MHz
Operating Supply Voltage
3.3 V, 5 V
Maximum Operating Temperature
+ 105 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
0 C
Core Size
32 Bit
Cpu Speed
16MHz
Digital Ic Case Style
QFP
No. Of Pins
64
Supply Voltage Range
5V
Operating Temperature Range
0°C To +70°C
Frequency Typ
20MHz
Filter Terminals
SMD
Rohs Compliant
Yes
Clock Frequency
16MHz
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Features
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MC68SEC000AA16
Manufacturer:
Freescale Semiconductor
Quantity:
10 000
Part Number:
MC68SEC000AA16
Manufacturer:
FREESCALE
Quantity:
20 000
Company:
Part Number:
MC68SEC000AA16R2
Manufacturer:
Freescale Semiconductor
Quantity:
10 000
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Operating Modes and On-Chip Memory
EPGM — EPROM/OTPROM/EEPROM Programming Voltage Enable Bit
During EEPROM programming, the ROW and BYTE bits of PPROG are not used. If the frequency of the
E clock is 1 MHz or less, set the CSEL bit in the OPTION register. Recall that 0s must be erased by a
separate erase operation before programming. The following examples of how to program an EEPROM
byte assume that the appropriate bits in BPROT are cleared.
2.5.1.3 EEPROM Bulk Erase
This is an example of how to bulk erase the entire EEPROM. The CONFIG register is not affected in this
example.
2.5.1.4 EEPROM Row Erase
This example shows how to perform a fast erase of large sections of EEPROM.
54
PROG
BULKE
ROWE
0 = Programming voltage to EEPROM array switched off
1 = Programming voltage to EEPROM array switched on
LDAB
STAB
STAA
LDAB
STAB
JSR
CLR
LDAB
STAB
STAA
LDAB
STAB
JSR
CLR
LDAB
STAB
STAB
LDAB
STAB
JSR
CLR
#$02
$103B
$XXXX
#$03
$103B
DLY10
$103B
#$06
$103B
$XXXX
#$07
$103B
DLY10
$103B
#$0E
$103B
0,X
#$0F
$103B
DLY10
$103B
EELAT = 1
Set EELAT bit
Store data to EEPROM address
(for valid EEPROM address see memory
map for each device)
EELAT = 1, EPGM = 1
Turn on programming voltage
Delay 10 ms
Turn off high voltage and set
to READ mode
EELAT = 1, ERASE = 1
Set to BULK erase mode
Store data to any EEPROM address (for
valid EEPROM address see memory map
for each device)
EELAT = 1, EPGM = 1, ERASE = 1
Turn on high voltage
Delay 10 ms
Turn off high voltage and set
to READ mode
ROW = 1, ERASE = 1, EELAT = 1
Set to ROW erase mode
Write any data to any address in ROW
ROW = 1, ERASE = 1, EELAT = 1, EPGM = 1
Turn on high voltage
Delay 10 ms
Turn off high voltage and set
to READ mode
M68HC11E Family Data Sheet, Rev. 5.1
Freescale Semiconductor
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