BSS84P H6327 Infineon Technologies, BSS84P H6327 Datasheet - Page 3

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BSS84P H6327

Manufacturer Part Number
BSS84P H6327
Description
INFBSS84P H6327 SP000702496_P-KANAL_TR_R
Manufacturer
Infineon Technologies
Datasheet
Electrical Characteristics, at
Parameter
Dynamic Characteristics
Transconductance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
Reverse Diode
Inverse diode continuous
forward current
Inv. diode direct current, pulsed I
Inverse diode forward voltage V
Reverse recovery time
Reverse recovery charge
Rev 2.6
T A
g
C
C
C
t
t
t
t
Q
Q
Q
V
I
t
Q
Symbol
d(on)
r
d(off)
f
S
SM
rr
fs
iss
oss
rss
(plateau) V
SD
gs
gd
g
rr
= 25 °C, unless otherwise specified
V
I
V
f=1MHz
V
I
V
V
V
T
V
V
di
D
D
Page 3
A
DS
GS
DD
DD
DD
GS
DD
GS
R
F
=-0.14A
=-0.14A, R
=25°C
=-30V, I
/dt=100A/µs
£
=0, V
=-30V, V
=-48V, I
=-48V, I
=0 to -10V
=-48V, I
=0, I
2*I
Conditions
D
F
*R
DS
=-0.17A
F =
DS(on)max
D
D
D
=-25V,
G
GS
l
=-0.17A
=-0.17A,
=-0.17A
S
=25
,
=-4.5V,
,
0.065
min.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Values
-3.42
-0.93
0.13
16.2
20.5
0.25
typ.
6.7
8.6
0.3
15
23
10
6
2
1
-
-
2011-07-11
max.
-0.17 A
-0.68
-1.24 V
BSS 84 P
24.3
12.9
30.8
0.37
0.45
1.5
19
10
34
15
8
3
-
-
Unit
S
pF
ns
nC
V
ns
nC

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