R1LP0108ESP-5SI#S0 Renesas Electronics America, R1LP0108ESP-5SI#S0 Datasheet - Page 10

• Manufacturer Part Number: R1LP0108ESP-5SI#S0
• Manufacturer: Renesas Electronics America

R1LP0108E Series
Write Cycle
Write cycle time
Address valid to end of write
Chip select to end of write
Write pulse width
Address setup time
Write recovery time
Data to write time overlap
Data hold from write time
Output enable from end of write
Output disable to output in high-Z
Write to output in high-Z
Note
R10DS0029EJ0200 Rev.2.00
2011.01.14
1. t
2. This parameter is sampled and not 100% tested.
3. At any given temperature and voltage condition, t
4. A write occurs during the overlap of a low CS1#, a high CS2, a low WE#.
5. t
6. t
7. t
8. Don’t apply inverted phase signal externally when DQ pin is output mode.
referred to output voltage levels.
device to device.
A write begins at the latest transition among CS1# going low, CS2 going high and WE# going low.
A write ends at the earliest transition among CS1# going high, CS2 going low and WE# going high.
t
CHZ
WP
CW
AS
WR
is measured the address valid to the beginning of write.
, t
is measured from the beginning of write to the end of write.
Parameter
is measured from the later of CS1# going low or CS2 going high to end of write.
is measured from the earliest of CS1# or WE# going high or CS2 going low to the end of write cycle.
OHZ
and t
WHZ
are defined as the time at which the outputs achieve the open circuit conditions and are not
Symbol
t
t
t
t
t
t
t
t
t
t
WHZ
t
OHZ
WC
WR
OW
AW
CW
WP
DW
AS
DH
R1LP0108E**-5S*
Min.
55
50
50
45
25
0
0
0
5
0
0
HZ
max is less than t
Max.
20
20
-
-
-
-
-
-
-
-
-
LZ
R1LP0108E**-7S*
Min.
70
55
55
50
30
0
0
0
5
0
0
min both for a given device and from
Max.
25
25
-
-
-
-
-
-
-
-
-
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
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Note
1,2
1,2
5
4
6
7
2