JANTX2N7219 International Rectifier, JANTX2N7219 Datasheet

JANTX2N7219

Manufacturer Part Number
JANTX2N7219
Description
Manufacturer
International Rectifier
Type
Power MOSFETr
Datasheet

Specifications of JANTX2N7219

Number Of Elements
1
Polarity
N
Channel Mode
Enhancement
Drain-source On-res
0.25Ohm
Drain-source On-volt
200V
Gate-source Voltage (max)
±20V
Drain Current (max)
18A
Power Dissipation
125W
Output Power (max)
Not RequiredW
Frequency (max)
Not RequiredMHz
Noise Figure
Not RequireddB
Power Gain
Not RequireddB
Drain Efficiency
Not Required%
Operating Temp Range
-55C to 125C
Operating Temperature Classification
Military
Mounting
Through Hole
Pin Count
3 +Tab
Package Type
TO-254AA
Lead Free Status / Rohs Status
Not Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
JANTX2N7219
Manufacturer:
TI
Quantity:
362
POWER MOSFET
THRU-HOLE (TO-254AA)
For footnotes refer to the last page
Absolute Maximum Ratings
HEXFET
Rectifier’s advanced line of power MOSFET transistors.
The efficient geometry design achieves very low on-state
resistance combined with high transconductance.
transistors also feature all of the well-established advantages
of MOSFETs, such as voltage control, very fast switching,
ease of paralleling and electrical parameter temperature
stability. They are well-suited for applications such as
switching power supplies, motor controls, inverters,
choppers, audio amplifiers, high energy pulse circuits, and
virtually any application where high reliability is required.
The
the need for additional isolating material between the device
and the heatsink. This improves thermal efficiency and
reduces drain capacitance.
I D @ V GS = 10V, T C = 100°C Continuous Drain Current
I D @ V GS = 10V, T C = 25°C
www.irf.com
Product Summary
Part Number
IRFM240
HEXFET
P D @ T C = 25°C
®
MOSFET technology is the key to International
T STG
dv/dt
V GS
E AR
E AS
I DM
I AR
T J
transistor’s totally isolated package eliminates
R
0.18 Ω
DS(on)
Parameter
Continuous Drain Current
Pulsed Drain Current 
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy ‚
Avalanche Current 
Repetitive Avalanche Energy 
Peak Diode Recovery dv/dt ƒ
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
18A
I
D
HEXFET
REF:MIL-PRF-19500/596
n
n
n
n
n
n
Features:
HEXFET
Light-weight
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Electrically Isolated
Dynamic dv/dt Rating
300 ( 0.063 in.(1.6mm) from case for 10s)
®
MOSFET TECHNOLOGY
9.3 (Typical)
JANTXV2N7219
-55 to 150
200V, N-CHANNEL
JANTX2N7219
12.5
125
±20
450
TO-254AA
1.0
5.0
18
11
72
18
IRFM240
PD - 90555E
Units
W/°C
V/ns
mJ
mJ
o
A
W
V
A
C
g
1

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JANTX2N7219 Summary of contents

Page 1

... Repetitive Avalanche Energy  dv/dt Peak Diode Recovery dv/dt ƒ Operating Junction T STG Storage Temperature Range Lead Temperature Weight For footnotes refer to the last page www.irf.com JANTX2N7219 JANTXV2N7219 REF:MIL-PRF-19500/596 200V, N-CHANNEL ® HEXFET MOSFET TECHNOLOGY HEXFET Features: Simple Drive Requirements n Ease of Paralleling ...

Page 2

... Forward Turn-On Time Thermal Resistance Parameter R thJC Junction-to-Case R thJS Case-to-sink R thJA Junction-to-Ambient Note: Corresponding Spice and Saber models are available on the International Rectifier Website. For footnotes refer to the last page 25°C (Unless Otherwise Specified) Min Typ Max Units 200 — — ...

Page 3

Fig 1. Typical Output Characteristics Fig 3. Typical Transfer Characteristics www.irf.com IRFM240 Fig 2. Typical Output Characteristics Fig 4. Normalized On-Resistance Vs. Temperature 3 ...

Page 4

IRFM240 Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 7. Typical Source-Drain Diode Forward Voltage 4 Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 8. Maximum Safe Operating Area www.irf.com ...

Page 5

Fig 9. Maximum Drain Current Vs. Case Temperature Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com ≤ 1 ≤ 0.1 % Fig 10a. Switching Time Test Circuit V DS 90% 10 d(on) r d(off) ...

Page 6

IRFM240 D.U 20V GS 0.01 Ω Fig 12a. Unclamped Inductive Test Circui Fig 12b. Unclamped Inductive Waveforms ...

Page 7

Footnotes:  Repetitive Rating; Pulse width limited by maximum junction temperature. ‚ 50V, starting 25°C, L= 1.3mH Peak 18A 10V GS Case Outline and Dimensions — TO-254AA 13.84 [.545] ...

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