2N6650JANTX MICROSEMI, 2N6650JANTX Datasheet
![](/photos/31/42/314273/to-3_pkg_3_pins_jpg_sml.jpg)
2N6650JANTX
Manufacturer Part Number
2N6650JANTX
Description
Manufacturer
MICROSEMI
Datasheet
1.2N6650JANTX.pdf
(2 pages)
Specifications of 2N6650JANTX
Polarity
PNP
Number Of Elements
1
Collector-emitter Voltage
80V
Collector-base Voltage
80V
Emitter-base Voltage
5V
Collector-emitter Saturation Voltage
2@10mA@5A/3@0.1A@10AV
Operating Temp Range
-55C to 125C
Operating Temperature Classification
Military
Mounting
Through Hole
Pin Count
2 +Tab
Package Type
TO-3
Lead Free Status / Rohs Status
Not Compliant
PNP DARLINGTON POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/527
Devices
2N6648
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
1)
2)
ELECTRICAL CHARACTERISTICS (T
OFF CHARACTERISTICS
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
Thermal Resistance Junction-to-Case
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Base Current
Collector Current
Total Power Dissipation
Operating & Storage Junction Temperature Range T
Collector-Emitter Breakdown Voltage
Collector-Emitter Breakdown Voltage
Collector-Base Cutoff Current
I
I
V
V
V
C
C
Derate linearly 33.3 mW/
Derate linearly 567 mW/
CB
CB
CB
= 200 mAdc
= 200 mAdc, R
= -40 Vdc
= -60 Vdc
= -80 Vdc
Characteristics
BB
Ratings
= 100
Characteristics
0
0
C for T
C for T
@ T
@ T
2N6649
A
C
C
= +25
= +25
A
> +25
> +25
0
0
C
C
0
0
C
C
(2)
(1)
C
2N6648
2N6649
2N6650
2N6648
2N6649
2N6650
2N6648
2N6649
2N6650
= 25
Symbol 2N6648 2N6649 2N6650 Unit
Symbol
V
V
V
R
J
0
,
P
CEO
CBO
EBO
I
I
C unless otherwise noted)
T
B
C
T
JC
stg
2N6650
-40
-40
-65 to +175
Max.
-0.25
1.76
-5.0
-60
-60
-10
5.0
85
V
V
Symbol
(BR)
(BR)
I
CBO
CEO
CER
TECHNICAL DATA
-80
-80
0
Unit
Vdc
Vdc
Vdc
Adc
Adc
C/W
0
W
W
C
Min.
-40
-60
-80
-40
-60
-80
*See Appendix A for
package outline
TO-3* (TO-204AA)
Qualified Level
Max.
-1.0
-1.0
-1.0
JANTXV
JANTX
Page 1 of 2
mAdc
Unit
Vdc
Vdc
120101
Related parts for 2N6650JANTX
2N6650JANTX Summary of contents
Page 1
PNP DARLINGTON POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/527 Devices 2N6648 2N6649 MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Base Current Collector Current Total Power Dissipation @ Operating & Storage Junction Temperature Range T ...
Page 2
ELECTRICAL CHARACTERISTICS (con’t) Characteristics Emitter-Base Cutoff Current V = 5.0 Vdc EB Collector-Emitter Cutoff Current V = -40 Vdc -60 Vdc -80 Vdc CE Collector-Emitter Cutoff Current V = -40 Vdc 1.5 ...