1N5809JANTX MICROSEMI, 1N5809JANTX Datasheet

1N5809JANTX

Manufacturer Part Number

1N5809JANTX

Description

Manufacturer

MICROSEMI

Datasheet

1.1N5809JANTX.pdf (3 pages)

Specifications of 1N5809JANTX

Rectifier Type

Switching Diode

Configuration

Single

Peak Rep Rev Volt

100V

Avg. Forward Curr (max)

Rev Curr

5uA

Peak Non-repetitive Surge Current (max)

125A

Forward Voltage

0.875V

Operating Temp Range

-65C to 175C

Package Type

Case E

Rev Recov Time

30ns

Operating Temperature Classification

Military

Mounting

Through Hole

Pin Count

Lead Free Status / Rohs Status

Not Compliant

Current page: 1 of 3
Download datasheet (209Kb)

2-25-2008 REVC

IMPORTANT: For the most current data, consult MICROSEMI’s website:

ELECTRICAL CHARACTERISTICS

1N5807

1N5809

1N5811

This “Ultrafast Recovery” rectifier diode series is military qualified to MIL-PRF-19500/477 and

is ideal for high-reliability applications where a failure cannot be tolerated. These industry-

recognized 6.0 Amp rated rectifiers for working peak reverse voltages from 50 to 150 volts

are hermetically sealed with voidless-glass construction using an internal “Category I”

metallurgical bond.

configurations by adding a “US” suffix (see separate data sheet for 1N5807US thru

1N5811US). Microsemi also offers numerous other rectifier products to meet higher and

lower current ratings with various recovery time speed requirements including standard, fast

and ultrafast device types in both through-hole and surface mount packages.

TYPE

• Popular JEDEC registered 1N5807 to 1N5811 series

• Voidless hermetically sealed glass package

• Extremely robust construction

• Triple-layer passivation

• Internal “Category I” Metallurgical bonds

• JAN, JANTX, JANTXV, and JANS available per MIL-PRF-

• Surface mount equivalents also available in a square end-

• Junction Temperature: -65

• Storage Temperature: -65

• Average Rectified Forward Current (I

• Thermal Resistance: 22 ºC/W junction to lead (L=.375 in)

• Thermal Impedance: 1.5 ºC/W @ 10 ms heating time

• Forward Surge Current (8.3 ms half sine) 125 Amps

• Capacitance: 60 pF at 10 volts, f = 1 MHz

• Solder temperature: 260ºC for 10 s (maximum)

NOTE 1: Rated at T

NOTE 2: Derate linearly at 25 mA/ºC above T

NOTE 3: T

NOTE 4: I

19500/477

cap MELF configuration with “US” suffix (see separate data

sheet for 1N5807US thru 1N5811US)

at 3/8 inch lead length (see note 1)

WORKING

VOLTAGE

REVERSE

ambient is sufficiently controlled where T

VOLTS

PEAK

100

150

= 1.0 A, I

= 25

RWM

8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503

C @ I

MAXIMUM RATINGS

S C O T T S D A L E D I V I S I O N

= 75ºC at 3/8 inch lead length. Derate at 60 mA/ºC for T

BREAKDOWN

These devices are also available in surface mount MELF package

= 1.0 A, I

VOLTAGE

FEATURES

= 3.0 A and V

@ 100μA

VOLTS

(MIN.)

110

160

C to +175

R(REC)

C to +175

= 0.10 A and di/dt = 100 A/µs min

RWM

DESCRIPTION

RECTIFIED

AVERAGE

CURRENT

(Note 1)

AMPS

for ten 8.3 ms surges at 1 minute intervals

): 6 A @ T

6.0

=75

= 55ºC. This rating is typical for PC boards where thermal resistance from mounting point to

J(max

Scottsdale Division

RECTIFIED

)

Microsemi

AVERAGE

CURRENT

does not exceed 175ºC

Note 2

= 75ºC

3.0

=55

http://www.microsemi.com

VOIDLESS-HERMETICALLY-SEALED

0.875

(8.3 ms pulse)

FORWARD

MAXIMUM

VOLTAGE

ULTRAFAST RECOVERY GLASS

VOLTS

@ 4 A

• Ultrafast recovery 6 Amp rectifier series 50 to 150 V

• Military and other high-reliability applications

• Switching power supplies or other applications

• High forward surge current capability

• Low thermal resistance

• Controlled avalanche with peak reverse power

•

above 75ºC.

requiring extremely fast switching & low forward

loss

capability

Inherently radiation hard

MicroNote 050

CASE: Hermetically sealed voidless hard glass with

Tungsten slugs

100

0.800

TERMINATIONS: Axial-leads are Tin/Lead (Sn/Pb)

MARKING: Body painted and part number, etc.

POLARITY: Cathode indicated by band

Tape & Reel option: Standard per EIA-296

Weight: 750 mg

See package dimensions on last page

over Copper. Note: Previous JANS inventory had

solid Silver (Ag) axial-leads and no finish.

MECHANICAL AND PACKAGING

1N5807 thru 1N5811

APPLICATIONS / BENEFITS

RECTIFIERS

CURRENT

REVERSE

@ V

(MAX)

C 125

μA

RWM

525

as described in Microsemi

CURRENT

(NOTE 3)

SURGE

AMPS

(MAX)

125

FSM

APPEARANCE

“E” Package

RECOVERY

TIME (MAX)

REVERSE

(NOTE 4)

Page 1

Related parts for 1N5809JANTX

1N5809JANTX Summary of contents

Page 1

... These devices are also available in surface mount MELF package configurations by adding a “US” suffix (see separate data sheet for 1N5807US thru 1N5811US). Microsemi also offers numerous other rectifier products to meet higher and lower current ratings with various recovery time speed requirements including standard, fast and ultrafast device types in both through-hole and surface mount packages. IMPORTANT: For the most current data, consult MICROSEMI’ ...

Page 2

... REVC 8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503 1N5807 thru 1N5811 VOIDLESS-HERMETICALLY-SEALED ULTRAFAST RECOVERY GLASS RECTIFIERS SYMBOLS & DEFINITIONS Definition GRAPHS TYPICAL REVERSE CURRENT vs. VOLTAGE FIGURE 4 FORWARD PULSE CURRENT vs. DURATION Microsemi Scottsdale Division FIGURE 2 Page 2 ...

Page 3

... Copyright © 2008 2-25-2008 REVC 8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503 1N5807 thru 1N5811 VOIDLESS-HERMETICALLY-SEALED ULTRAFAST RECOVERY GLASS RECTIFIERS MULTIPLE SURGE CURRENT vs. DURATION PACKAGE DIMENSIONS Lead Tolerance = + .002 -.003 in Microsemi Scottsdale Division FIGURE 7 Page 3 ...

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