NE678M04-T2-A CALIFORNIA EASTERN LABS, NE678M04-T2-A Datasheet

NE678M04-T2-A

Manufacturer Part Number

NE678M04-T2-A

Description

Manufacturer

CALIFORNIA EASTERN LABS

Datasheet

1.NE678M04-T2-A.pdf (8 pages)

Specifications of NE678M04-T2-A

Transistor Polarity

NPN

Number Of Elements

Collector-emitter Voltage

Collector-base Voltage

Emitter-base Voltage

Collector Current (dc) (max)

100mA

Dc Current Gain (min)

Power Dissipation

205mW

Frequency (max)

12GHz

Operating Temp Range

-65C to 150C

Operating Temperature Classification

Military

Mounting

Surface Mount

Pin Count

Lead Free Status / Rohs Status

Compliant

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• HIGH GAIN BANDWIDTH:

• HIGH OUTPUT POWER:

• HIGH LINEAR GAIN:

• NEW LOW PROFILE M04 PACKAGE:

ELECTRICAL CHARACTERISTICS

Notes:

1. Pulsed measurement, pulse width ≤ 350 µs, duty cycle ≤ 2 %.

2. Collector to Base capacitance measured by capacitance meter(automatic balance bridge method) when emitter pin is connected to the

3. Electronic Industrail Association of Japan.

FEATURES

DESCRIPTION

NEC's NE678M04 is fabricated using NEC's HFT3 wafer

process. With a transition frequency of 12 GHz, the NE678M04

is usable in applications from 100 MHz to 3 GHz. The NE678M04

provides P1dB of 18 dBm, even with low voltage and low

current, making this device an excellent choice for the driver

stage for mobile or fixed wireless applications.

The NE678M04 is housed in NEC's new low profile/flat lead

style "M04" package

guard pin of capacitance meter.

MAG =

SOT-343 footprint, with a height of only 0.59 mm

Flat lead style for better RF performance

-1dB

= 12 GHz

= 13 dB at 1.8 GHz

SYMBOLS

SILICON HIGH FREQUENCY TRANSISTOR

= 18 dBm at 1.8 GHz

MAG

Cre

CBO

EBO

21E

1dB

(

K ±

Collector Cutoff Current at V

Emitter Cutoff Current at V

DC Current

Output Power at 1 dB compression point at V

f = 1.8 GHz, P

Linear Gain at V

Maximum Available Gain

Insertion Power Gain at V

Collector Efficiency at V

Noise Figure at V

Gain Bandwidth at V

Reverse Transfer Capacitance

K - 1

= 7 dBm

Gain at V

= 7 dBm

PARAMETERS AND CONDITIONS

EIAJ

= 2.8 V, I

NEC's MEDIUM POWER NPN

= 3 V, I

PACKAGE OUTLINE

REGISTRATION NUMBER

= 3 V, I

PART NUMBER

at V

= 2.8 V, I

= 3 V, I

= 7 mA, f = 2 GHz, Z

= 1 V, I

= 10 mA, f = 1.8 GHz, P

= 5V, I

at V

= 30 mA, f = 2 GHz

= 3 V, I

= 30 mA

= 25°C)

= 30 mA, f = 2 GHz

= 0

= 10 mA, f = 1.8 GHz,

= 3 V, I

= 0

= 30 mA, f = 2 GHz

= 2.8 V, I

= 0, f = 1 MHz

= Z

opt

= -5 dBm

= 10 mA,

California Eastern Laboratories

UNITS

dBm

GHz

PIN CONNECTIONS

1. Emitter

2. Collector

3. Emitter

4. Base

+0.30

MIN

2.05±0.1

1.25±0.1

8.0

NE678M04

2SC5753

M04

TYP

18.0

13.0

13.5

10.5

12.0

0.42

120

1.7

MAX

100

150

2.5

0.7

Related parts for NE678M04-T2-A

NE678M04-T2-A Summary of contents

Page 1

... NEC's NE678M04 is fabricated using NEC's HFT3 wafer process. With a transition frequency of 12 GHz, the NE678M04 is usable in applications from 100 MHz to 3 GHz. The NE678M04 provides P1dB of 18 dBm, even with low voltage and low current, making this device an excellent choice for the driver stage for mobile or fixed wireless applications ...

Page 2

... Collector to Emitter Voltage V 1 ORDERING INFORMATION (T = 25°C) A PART NUMBER UNITS RATINGS NE678M04-T2-A V 9.0 V 6.0 V 2.0 mA 100 THERMAL RESISTANCE mW 205 SYMBOLS 150 °C R -65 to +150 °C Note: 1. Mounted on a 1.08cm ( °C) A 125 150 (º ...

Page 3

... Collector Current I C INSERTION POWER GAIN, MAG vs. COLLECTOR CURRENT 2.5 GHz 20 15 MAG 21e Collector Current °C) A 100 MAG 100 (mA) 100 (mA) NE678M04 INSERTION POWER GAIN, MAG, MSG vs. FREQUENCY MSG MAG 21e 0.1 Frequency f (mA) INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT ...

Page 4

... NE678M04 TYPICAL PERFORMANCE CURVES OUTPUT POWER, POWER GAIN, COLLECTOR CURRENT, COLLECTOR EFFICIENCY vs. INPUT POWER 3 0.9 GHz out (RF OFF η Input Power P (dBm) in OUTPUT POWER, POWER GAIN, COLLECTOR CURRENT, COLLECTOR EFFICIENCY vs. INPUT POWER 2 2 1.8 GHz f = 1.8 GHz (RF OFF (RF OFF out out ...

Page 5

... ∆ ∆ NE678M04 +0º +0º 1 MAG (dB) 29.97 26.71 24.93 23.61 22.62 21.75 21.00 20.32 19.72 19.17 16.81 13.98 13.41 12.93 11.02 9.63 8.62 7.95 7.59 7.69 6.86 6. ...

Page 6

... NE678M04 TYPICAL SCATTERING PARAMETERS j50 j25 j10 S11 100 S22 -j10 -j25 -j50 NE678M04 FREQUENCY S 11 GHz MAG ANG 0.100 0.52 -74.30 0.200 0.55 -114.70 0.300 0.56 -136.33 0.400 0.56 -149.34 0.500 0.56 -158.35 0.600 0.56 -167.02 0.700 0.57 -172.39 0.800 ...

Page 7

... ∆ ∆ Internet: http://WWW.CEL.COM NE678M04 +0º +0º 1 MAG (dB) 35.14 31.73 29.60 27.89 26.43 25.20 24.08 22.69 21.26 20.18 16.43 14.89 14.44 14.02 12.29 10.96 9.97 9.29 9.02 8.67 7.95 7. ...

Page 8

Subject: Compliance with EU Directives CEL certifies, to its knowledge, that semiconductor and laser products detailed below are compliant with the requirements of European Union (EU) Directive 2002/95/EC Restriction on Use of Hazardous Substances in electrical and electronic equipment (RoHS) ...

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