MP4101(Q) Toshiba, MP4101(Q) Datasheet

MP4101(Q)

Manufacturer Part Number

MP4101(Q)

Description

Manufacturer

Toshiba

Datasheet

1.MP4101Q.pdf (5 pages)

Specifications of MP4101(Q)

Polarity

NPN

Number Of Elements

Collector-emitter Voltage

70V

Collector-base Voltage

70V

Emitter-base Voltage

Base-emitter Saturation Voltage (max)

2@10mA@3AV

Collector-emitter Saturation Voltage

1.5@10mA@3AV

Collector Current (dc) (max)

Dc Current Gain

1000@3A@2V

Mounting

Through Hole

Pin Count

Package Type

SIP

Lead Free Status / Rohs Status

Compliant

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High Power Switching Applications

Hammer Drive, Pulse Motor Drive

Inductive Load Switching

•

Absolute Maximum Ratings

Array Configuration

Small package by full molding (SIP 10 pins)

High collector power dissipation (4-device operation)

: P

High collector current: I

High DC current gain: h

Zener diode included between collector and base.

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Continuous base current

Collector power dissipation

(1-device operation)

Collector power dissipation

(4-device operation)

Junction temperature

Storage temperature range

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

= 4 W (Ta = 25°C)

R1 R2

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report

and estimated failure rate, etc).

Characteristics

TOSHIBA Power Transistor Module Silicon NPN Epitaxial Type

R1 ≈ 4.5 kΩ

Pulse

C (DC)

= 2000 (min) (V

(Four Darlington Power Transistors in One)

= 4 A (max)

R2 ≈ 300 Ω

(Ta = 25°C)

Symbol

CBO

CEO

EBO

stg

MP4101

= 2 V, I

−55 to 150

60 ± 10

Rating

150

0.5

2.0

4.0

= 1 A)

Unit

°C

Weight: 2.1 g (typ.)

JEDEC

JEITA

TOSHIBA

Industrial Applications

2-25A1A

2006-10-27

―

MP4101

Unit: mm

Related parts for MP4101(Q)

MP4101(Q) Summary of contents

Page 1

... Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). ...

Page 2

Marking MP4101 JAPAN Thermal Characteristics Characteristics Thermal resistance from junction to ambient (4-device operation 25°C) Maximum lead temperature for soldering purposes (3.2 mm from case for 10 s) Electrical Characteristics Characteristics Collector cut-off current Collector cut-off current Emitter ...

Page 3

I – Common emitter 500 400 300 25°C 200 4 170 3 2 160 150 μ Collector-emitter voltage ...

Page 4

Curves should be applied in thermal limited area. 100 (Single nonrepetitive pulse) The figure shows thermal resistance per device versus pulse width 0.3 0.001 0.01 Safe Operating Area max (pulsed ...

Page 5

... The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • ...

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