K4M51323LC-DN75000 Samsung Semiconductor, K4M51323LC-DN75000 Datasheet
K4M51323LC-DN75000
Specifications of K4M51323LC-DN75000
Related parts for K4M51323LC-DN75000
K4M51323LC-DN75000 Summary of contents
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... GENERAL DESCRIPTION The K4M51323LC is 536,870,912 bits synchronous high data rate Dynamic RAM organized 4,196,304 words by 32 bits, fabricated with SAMSUNG’s high performance CMOS technol- ogy ...
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... K4M51323LC - S(D)N/G/L/F FUNCTIONAL BLOCK DIAGRAM Bank Select CLK ADD LCKE LRAS LCBR CLK CKE CS Data Input Register Column Decoder Latency & Burst Length Programming Register LWE LCAS Timing Register RAS CAS WE 2 Mobile-SDRAM LWCBR LDQM DQM LWE LDQM DQi March 2006 ...
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... K4M51323LC - S(D)N/G/L/F Package Dimension and Pin Configuration < Bottom View < Top View #A1 Ball Origin Indicator *1 > Pin Name > DQM Symbol 3 Mobile-SDRAM *2 < Top View > 90Ball(6x15) FBGA DQ26 DQ24 DQ28 DDQ SSQ DDQ V DQ27 DQ25 DQ22 SSQ V DQ29 DQ30 DQ17 SSQ V DQ31 NC NC ...
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... K4M51323LC - S(D)N/G/L/F ABSOLUTE MAXIMUM RATINGS Parameter Voltage on any pin relative Voltage on V supply relative Storage temperature Power dissipation Short circuit current NOTES: Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded. Functional operation should be restricted to recommended operating condition. Exposure to higher than recommended voltage for extended periods of time could affect device reliability. ...
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... K4M51323LC - S(D)N/G/L/F DC CHARACTERISTICS Recommended operating conditions (Voltage referenced to V Parameter Symbol Operating Current I CC1 (One Bank Active Precharge Standby Current in power-down mode 2PS CKE & CLK ≤ Precharge Standby Current in non power-down mode I 2NS Active Standby Current in power-down mode 3PS CKE & CLK ≤ V ...
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... K4M51323LC - S(D)N/G/L/F AC OPERATING TEST CONDITIONS Parameter AC input levels (Vih/Vil) Input timing measurement reference level Input rise and fall time Output timing measurement reference level Output load condition VDDQ 500Ω Output 500Ω Figure 1. DC Output Load Circuit = 2.5V ± 0.2V, T ...
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... K4M51323LC - S(D)N/G/L/F OPERATING AC PARAMETER (AC operating conditions unless otherwise noted) Parameter Row active to row active delay RAS to CAS delay Row precharge time Row active time Row cycle time Last data in to row precharge Last data in to Active delay Last data in to new col. address delay Last data in to burst stop Col ...
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... K4M51323LC - S(D)N/G/L/F AC CHARACTERISTICS (AC operating conditions unless otherwise noted) Parameter CLK cycle time CLK to valid output delay Output data hold time CLK high pulse width CLK low pulse width Input setup time Input hold time CLK to output in Low-Z CLK to output in Hi-Z NOTES : 1 ...
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... K4M51323LC - S(D)N/G/L/F SIMPLIFIED TRUTH TABLE COMMAND Register Mode Register Set Auto Refresh Entry Refresh Self Refresh Exit Bank Active & Row Addr. Read & Auto Precharge Disable Column Address Auto Precharge Enable Write & Auto Precharge Disable Column Address Auto Precharge Enable ...
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... K4M51323LC - S(D)N/G/L/F A. MODE REGISTER FIELD TABLE TO PROGRAM MODES Register Programmed with Normal MRS BA0 ~ BA1 Address A12 ~ A10/AP "0" Setting for Function Normal MRS Normal MRS Mode Test Mode A8 A7 Type Mode Register Set Reserved Reserved Reserved 0 Write Burst Length 1 A9 ...
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... K4M51323LC - S(D)N/G/L/F Partial Array Self Refresh 1. In order to save power consumption, Mobile SDRAM has PASR option. 2. Mobile SDRAM supports 3 kinds of PASR in self refresh mode : Full Array, 1/2 of Full Array and 1/4 of Full Array. BA1=0 BA1=0 BA0=0 BA0=1 BA1=1 BA1=1 BA0=0 BA0=1 ...
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... K4M51323LC - S(D)N/G/L/F C. BURST SEQUENCE 1. BURST LENGTH = 4 Initial Address BURST LENGTH = 8 Initial Address Sequential Sequential Mobile-SDRAM Interleave Interleave March 2006 ...