MT46V64M4BG-6:G TR Micron Technology Inc, MT46V64M4BG-6:G TR Datasheet - Page 82
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MT46V64M4BG-6:G TR
Manufacturer Part Number
MT46V64M4BG-6:G TR
Description
Manufacturer
Micron Technology Inc
Type
DDR SDRAMr
Datasheet
1.MT46V64M4BG-6G_TR.pdf
(93 pages)
Specifications of MT46V64M4BG-6:G TR
Organization
64Mx4
Density
256Mb
Address Bus
15b
Access Time (max)
700ps
Maximum Clock Rate
333MHz
Operating Supply Voltage (typ)
2.5V
Package Type
FBGA
Operating Temp Range
0C to 70C
Operating Supply Voltage (max)
2.7V
Operating Supply Voltage (min)
2.3V
Supply Current
175mA
Pin Count
60
Mounting
Surface Mount
Operating Temperature Classification
Commercial
Lead Free Status / Rohs Status
Compliant
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Figure 45:
PDF: 09005aef80768abb/Source: 09005aef82a95a3a
DDR_x4x8x16_Core2.fm - 256Mb DDR: Rev. O, Core DDR: Rev. B 1/09 EN
Command
Address
t DQSS (NOM)
t DQSS (MIN)
t DQSS (MAX)
DQS
DQS
DQS
CK#
DM
DM
DM
DQ
DQ
DQ
CK
WRITE-to-PRECHARGE – Uninterrupting
Notes:
Bank a,
WRITE
Col b
T0
t DQSS
t DQSS
t DQSS
1. DI b = data-in for column b.
2. Three subsequent elements of data-in are applied in the programmed order following DI b.
3. An uninterrupted burst of 4 is shown.
4.
5. The PRECHARGE and WRITE commands are to the same device. However, the PRECHARGE
6. A10 is LOW with the WRITE command (auto precharge is disabled).
t
and WRITE commands may be to different devices, in which case
the PRECHARGE command could be applied earlier.
DI
b
WR is referenced from the first positive CK edge after the last data-in pair.
NOP
DI
T1
b
DI
b
T1n
NOP
T2
T2n
80
NOP
T3
Micron Technology, Inc., reserves the right to change products or specifications without notice.
t WR
NOP
T4
256Mb: x4, x8, x16 DDR SDRAM
Transitioning Data
(a or all)
Bank,
T5
PRE
©2003 Micron Technology, Inc. All rights reserved.
t
WR is not required, and
t RP
T6
NOP
Operations
Don’t Care
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