MT48H32M16LFBF-75:B Micron Technology Inc, MT48H32M16LFBF-75:B Datasheet - Page 52

• Manufacturer Part Number: MT48H32M16LFBF-75:B
• Manufacturer: Micron Technology Inc
• Type: SDRAMr

Specifications of MT48H32M16LFBF-75:B

• Organization: 32Mx16
• Density: 512Mb
• Address Bus: 15b
• Access Time (max): 8/5.4ns
• Maximum Clock Rate: 133MHz
• Operating Supply Voltage (typ): 1.8V
• Package Type: VFBGA
• Operating Temp Range: 0C to 70C
• Operating Supply Voltage (max): 1.95V
• Operating Supply Voltage (min): 1.7V
• Supply Current: 90mA
• Pin Count: 54
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / Rohs Status: Compliant

Figure 22: Terminating a READ Burst
PDF: 09005aef82ea3742
512mb_mobile_sdram_y47m.pdf – Rev. H 12/09 EN
Note:
Continuous-page READ bursts can be truncated with a BURST TERMINATE command
and fixed-length READ bursts can be truncated with a BURST TERMINATE command,
provided that auto precharge was not activated. The BURST TERMINATE command
should be issued x cycles before the clock edge at which the last desired data element is
valid, where x = CL - 1. This is shown in Figure 22 (page 52) for each possible CAS
latency; data element n + 3 is the last desired data element of a longer burst.
Command
Command
1. DQM is LOW.
Address
Address
CLK
CLK
DQ
DQ
Bank,
T0
Col n
T0
READ
Bank,
READ
Col n
CL = 2
CL = 3
512Mb: 32 Meg x 16, 16 Meg x 32 Mobile SDRAM
T1
T1
NOP
NOP
52
T2
T2
NOP
NOP
D
OUT
Micron Technology, Inc. reserves the right to change products or specifications without notice.
T3
T3
NOP
NOP
D
D
OUT
OUT
TERMINATE
TERMINATE
BURST
BURST
T4
T4
X = 1 cycle
D
D
OUT
OUT
Transitioning data
X = 2 cycles
T5
T5
NOP
NOP
D
D
OUT
OUT
© 2007 Micron Technology, Inc. All rights reserved.
T6
T6
READ Operation
NOP
NOP
D
OUT
Don’t Care
T7
NOP