GP1S56TJ000F Sharp Electronics, GP1S56TJ000F Datasheet - Page 3

• Manufacturer Part Number: GP1S56TJ000F
• Manufacturer: Sharp Electronics
• Type: Transmissiver

Specifications of GP1S56TJ000F

• Number Of Elements: 1
• Output Device: Phototransistor
• Gap Width: 2mm
• Slit Width: 0.15mm
• Reverse Breakdown Voltage: 6V
• Collector-emitter Voltage: 35V
• Forward Current: 50mA
• Package Type: Compact
• Collector Current (dc) (max): 20mA
• Power Dissipation: 75mW
• Fall Time: 110000ns
• Rise Time: 90000ns
• Pin Count: 4
• Mounting: Through Hole
• Operating Temp Range: -25C to 85C
• Operating Temperature Classification: Commercial
• Lead Free Status / Rohs Status: Compliant

Fig. 5 Collector Current vs.
Fig. 7 Collector Current vs.
Fig. 9 Response Time vs.
1000
500
100
0.5
0.1
1.4
1.2
1.0
0.8
0.6
0.4
0.2
50
10
0
5
1
5
4
3
2
1
0
Load Resistance
Forward Current
Ambient Temperature
- 25
0.1
0
10
0
Ambient temperature T
1
Forward current I
Load resistance R
25
20
t
t
d
f
10
t
t
r
s
50
30
F
L
( mA )
( k
a
V
T
( ˚C )
100
V
I
T
CE
a
C
= 25˚C
)
75
CE
a
= 0.5mA
40
= 5V
= 25˚C
= 2V
1000
100
50
Input R
Fig. 6 Collector Current vs.
Fig. 8 Collector-emitter Saturation Voltage vs.
0.10
0.20
0.15
3.0
2.5
2.0
1.5
1.0
0.5
D
0
Collector-emitter Voltage
Ambient Temperature
- 25
0
Test Circuit for Response Time
I
I
1
F
C
= 40mA
= 0.6mA
Collector-emitter voltage V
2
V
0
CC
Ambient temperature T
R
L
3
Output
25
4
I
Output
F
= 50mA
5
10mA
40mA
30mA
20mA
Input
50
6
t
d
a
7
( ˚C )
CE
T
75
( V )
a
8
= 25˚C
t
r
t
s
9
GP1S56T
100
10
t
f
10%
90%