SST108-T1 Vishay, SST108-T1 Datasheet
SST108-T1
Specifications of SST108-T1
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SST108-T1 Summary of contents
Page 1
... D Fast Switching— Low Leakage Low Capacitance Low Insertion Loss The J/SST108 series is designed with high-performance analog switching applications in mind. It features low on-resistance, good off-isolation, and fast switching. The SST108 series is comprised of surface-mount devices featuring the lowest r DS(on) (SOT-23) JFET device. ...
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... J/SST108 Series Vishay Siliconix Gate-Drain, Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Lead Temperature ( / ” from case for 10 sec Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . _ Parameter Symbol Static Gate-Source V (BR)GSS Breakdown Voltage Gate-Source Cutoff Voltage V GS(off) b Saturation Drain Current I DSS Gate Reverse Current I GSS Gate Operating Current I G Drain Cutoff Current ...
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... GS(off) Document Number: 70231 S-04028—Rev. E, 04-Jun-01 _ 1000 = 800 600 I 400 DSS 200 0 –8 –10 = –2 V –4 V – 125 105 D –8 –10 J/SST108 Series Vishay Siliconix On-Resistance vs. Drain Current 25_C –2 V GS(off – – – Drain Current (mA) D Output Characteristics 100 V = – ...
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... J/SST108 Series Vishay Siliconix Capacitance vs. Gate-Source Voltage 100 MHz iss C 20 rss 0 0 –4 –8 –12 V – Gate-Source Voltage (V) GS Forward Transconductance and Output Conductance vs. Gate-Source Cutoff Voltage 200 g and kHz GS 160 120 –2 –4 –6 V – Gate-Source Cutoff Voltage (V) GS(off) ...
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... S-04028—Rev. E, 04-Jun- 1.0 0.1 = 25_C 0.01 50 100 Common Gate Output Admittance 100 T = 25_C 0 – Frequency (MHz) J/SST110 –5 V 150 GS(H) V GS(L) J/SST108 Series Vishay Siliconix Common Gate Reverse Admittance T = 25_C –g rg – – Frequency (MHz 100 Scope 51 100 L OUT www.vishay.com 7-5 ...
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... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...