2N5545JANTXE3 Vishay, 2N5545JANTXE3 Datasheet
2N5545JANTXE3
Specifications of 2N5545JANTXE3
Related parts for 2N5545JANTXE3
2N5545JANTXE3 Summary of contents
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... Top View –50 V Power Dissipation : 30 mA 300_C Notes –65 to 200_C a. Derate 2 mW/_C above 25_C –55 to 150_C b. Derate 4 mW/_C above 25_C Vishay Siliconix jV j Max (mV) – V GS1 GS2 Wideband Differential Amps D High-Speed, Temp-Compensated, Single-Ended Input Amps D High-Speed Comparators D Impedance Converters 2 a Per Side ...
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... Vishay Siliconix _ Parameter Symbol Static Gate-Source V (BR)GSS Breakdown Voltage Gate-Source V GS(off) Cutoff Voltage b Saturation Drain Current I DSS Gate Reverse Current I GSS Gate Operating Current I G Gate-Source V GS(F) Forward Voltage Dynamic Common-Source Forward Transconductance Common-Source Output Conductance Common-Source C iss Input Capacitance ...
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... –0.2 V –0.4 V –0.6 V –0.8 V –1.0 V –1.2 V –1 2 –0.2 V 2.0 GS –0.4 V 1.5 –0.6 V –0.8 V 1.0 –1.0 V –1.2 V 0.5 –1.4 V –1.6 V 0.8 1 Vishay Siliconix Gate Leakage Current = 200 125_C 125_C GSS 50 mA 200 25_C GSS T = 25_C – Drain-Gate Voltage (V) DG Output Characteristics ...
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... Vishay Siliconix Transfer Characteristics –2 V GS(off –55_C A 3 25_C 2 1 125_C 0 0 –0.5 –1.0 –1.5 V – Gate-Source Voltage (V) GS Voltage Differential with Temperature vs. Drain Current 100 125_C –55 to 25_C 0.01 0.1 I – Drain Current (mA) D Circuit Voltage Gain vs. Drain Current ...
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... 2.0 1.5 1.0 0 100 k 0. kHz 800 T = –55_C A 600 400 200 0 1 Vishay Siliconix Common-Source Reverse Feedback Capacitance vs. Gate-Source Voltage MHz –4 –8 –12 –16 V – Gate-Source Voltage (V) GS Output Conductance vs. Drain Current V = – GS(off kHz T = –55_C A 25_C 125_C ...
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... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...