SST3958NL-E3 Vishay, SST3958NL-E3 Datasheet

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SST3958NL-E3

Manufacturer Part Number
SST3958NL-E3
Description
Manufacturer
Vishay
Datasheet

Specifications of SST3958NL-E3

Channel Type
N
Configuration
Dual
Gate-source Voltage (max)
-50V
Drain-gate Voltage (max)
-50V
Operating Temperature (min)
-55C
Operating Temperature (max)
150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Lead Free Status / Rohs Status
Compliant
DESCRIPTION
The low cost SST3958NL and U3958NL JFET duals are
designed for high-performance differential amplification for a
wide range of precision test instrumentation applications. This
series features tightly matched specs, low gate leakage for
accuracy, and wide dynamic range with I
V
Pins 4 and 8 on the SST3958NL and pin 4 on the U3958NL part
numbers enable the substrate to be connected to a positive,
external bias (V
ABSOLUTE MAXIMUM RATINGS
Gate-Drain, Gate-Source Voltage
Gate Current
Lead Temperature (
Storage Temperature
Operating Junction Temperature
Document Number: 72157
S-22527—Rev. A, 17-Feb-03
PRODUCT SUMMARY
FEATURES
D Anti Latchup Capability
D Monolithic Design
D High Slew Rate
D Low Offset/Drift Voltage
D Low Gate Leakage: 5 pA
D Low Noise: 9
D High CMRR: 100 dB
V
DG
-1.0 to -4.5
GS(off)
= 20 V.
SUBSTRATE
(V)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1
V
DD
/
16
(BR)GSS
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
G
S
D
” from case for 10 sec.)
nV⁄√Hz
) to avoid latchup.
1
1
1
-50
1
2
3
4
Narrow Body SOIC
SST3958NL - 3958NL
Min (V)
. . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Marking Codes:
Top View
Monolithic N-Channel JFET Dual
g
BENEFITS
D External Substrate Bias—Avoids Latchup
D Tight Differential Match vs. Current
D Improved Op Amp Speed, Settling Time
D Minimum Input Error/Trimming Requirement
D Insignificant Signal Loss/Error Voltage
D High System Sensitivity
D Minimum Error with Large Input Signal
fs
. . . . . . . . . . . . . . . . . .
Accuracy
Min (mS)
G
1
8
7
6
5
guaranteed at
SUBSTRATE
G
D
S
2
2
2
-55 to 150_C
-65 to 200_C
I
G
300 _C
50 mA
New Product
-50 V
Max (pA)
-50
The U3958NL in the hermetically-sealed TO-78 package is
available with full military processing.
The SST3958NL in the SO-8 package provides ease of
manufacturing. The symmetrical pinout prevents improper
orientation. The SST3958NL is available with tape-and-reel
options for compatibility with automatic assembly methods.
Power Dissipation :
Notes
a.
b.
jV
GS1
Derate 2 mW/_C above 85_C
Derate 4 mW/_C above 85_C
D
D
- V
1
1
G
G
GS2
S
S
1
1
25
1
1
2
2
j Max (mV)
1
1
3
3
U3958NL
Top View
TO-78
TO-78
SST3958NL/U3958NL
4
4
Per Side
Total
CASE, SUBSTRATE
CASE, SUBSTRATE
APPLICATIONS
D Wideband Differential Amps
D High-Speed,
D High Speed Comparators
D Impedance Converters
Temp-Compensated,
Single-Ended Input Amps
b
7
7
5
5
. . . . . . . . . . . . . . . . . . . . . . . . . . .
6
6
a
G
G
. . . . . . . . . . . . . . . . . . . . . . . .
S
S
2
2
2
2
Vishay Siliconix
D
D
2
2
www.vishay.com
250 mW
500 mW
7-1

Related parts for SST3958NL-E3

SST3958NL-E3 Summary of contents

Page 1

... Pins 4 and 8 on the SST3958NL and pin 4 on the U3958NL part numbers enable the substrate to be connected to a positive, external bias ( avoid latchup. DD Narrow Body SOIC ...

Page 2

... SST3958NL/U3958NL Vishay Siliconix SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED) A Parameter Static Gate-Source Breakdown Voltage Gate-Source Cutoff Voltage b Saturation Drain Current Gate Reverse Current Gate Reverse Current Gate Operating Current Gate Operating Current Gate Source Voltage Gate-Source Voltage Gate-Source Forward Voltage Dynamic Common-Source ...

Page 3

... 0 -0.2 V -0.4 V -0.6 V -0.8 V -1.0 V -1 2.0 -0.2 V -0.4 V 1.5 -0.6 V -0.8 V 1.0 -1.0 V -1.2 V 0.5 -1.4 V -1.6 V 0.8 1 SST3958NL/U3958NL Vishay Siliconix Gate Leakage Current = 200 125_C 125_C GSS 200 25_C GSS T = 25_C Drain-Gate Voltage (V) DG Output Characteristics GS(off) 4 ...

Page 4

... SST3958NL/U3958NL Vishay Siliconix TYPICAL CHARACTERISTICS (T Transfer Characteristics GS(off -55_C A 3 25_C 2 125_C -0.5 -1.0 -1 Gate-Source Voltage (V) GS Voltage Differential with Temperature vs. Drain Current 100 125_C -55 to 25_C 0.01 0 Drain Current (mA) D Circuit Voltage Gain vs. Drain Current 100 GS(off Assume 0.01 0.1 ...

Page 5

... -16 - 2.0 1.5 1.0 0 100 k 0. kHz 800 = -55_C 600 400 200 SST3958NL/U3958NL Vishay Siliconix Common-Source Reverse Feedback Capacitance vs. Gate-Source Voltage MHz -12 - Gate-Source Voltage (V) GS Output Conductance vs. Drain Current GS(off kHz T = -55_C A 25_C 125_C 0 Drain Current (mA) D On-Resistance and Output Conductance vs ...

Page 6

... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...

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