SST406-T1-E3 Vishay, SST406-T1-E3 Datasheet - Page 3
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SST406-T1-E3
Manufacturer Part Number
SST406-T1-E3
Description
Manufacturer
Vishay
Datasheet
1.SST406-T1-E3.pdf
(6 pages)
Specifications of SST406-T1-E3
Channel Type
N
Configuration
Dual
Gate-source Voltage (max)
-40V
Drain-gate Voltage (max)
-40V
Operating Temperature (min)
-55C
Operating Temperature (max)
150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Lead Free Status / Rohs Status
Compliant
Document Number: 70247
S-04031—Rev. F, 04-Jun-01
3.2
2.4
1.6
0.8
2.4
1.8
1.2
0.6
10
8
6
4
2
0
4
0
3
0
0
0
0
V
V
Drain Current and Transconductance
GS(off)
GS(off)
I
g
f = 1 kHz
DSS
V
fs
vs. Gate-Source Cutoff Voltage
–0.5
GS(off)
0.2
@ V
4
@ V
= –1.5 V
= –1.5 V
V
V
DS
DS
Output Characteristics
Output Characteristics
DG
– Gate-Source Cutoff Voltage (V)
DS
– Drain-Source Voltage (V)
– Drain-Source Voltage (V)
= 15 V, V
= 15 V, V
–1.0
0.4
8
GS
–1.2 V
GS
= 0 V
= 0 V
g
–1.5
12
0.6
fs
–1.2 V
I
DSS
V
V
GS
–2.0
GS
0.8
16
= 0 V
–0.2 V
–0.4 V
–0.6 V
–0.8 V
–1.0 V
–0.2 V
–0.4 V
–0.6 V
–0.8 V
–1.0 V
= 0 V
–2.5
20
1
_
8.0
6.4
4.8
3.2
1.6
0
100 nA
100 pA
0.1 pA
10 nA
10 pA
1 nA
1 pA
3.2
2.4
1.6
0.8
7
6
5
4
3
2
1
0
4
0
0
0
0
V
V
T
T
A
I
A
GS(off)
GS(off)
GSS
= 125_C
= 25_C
I
G
@ I
0.2
10
@ 125_C
4
= –2 V
= –2 V
V
V
D
V
Output Characteristics
DS
Output Characteristics
DS
Gate Leakage Current
DG
= 500 mA
– Drain-Source Voltage (V)
– Drain-Source Voltage (V)
– Drain-Gate Voltage (V)
SST/U401 Series
20
0.4
8
Vishay Siliconix
50 mA
30
0.6
12
V
GS
I
GSS
= 0 V
@ 25_C
V
40
0.8
GS
16
www.vishay.com
–0.8 V
–1.0 V
–1.2 V
–1.4 V
50 mA
= 0 V
–0.2 V
–0.4 V
–0.6 V
–0.8 V
–1.0 V
–1.2 V
–0.2 V
–0.4 V
–0.6 V
50
20
1
8-3